Detection limit of large area 1D thin film position sensitive detectors based in a-Si: H P.I.N. diodes

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Abstract

The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD). The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Original languageEnglish
Pages (from-to)791-796
Number of pages6
JournalMRS Proceedings
Volume377
Publication statusPublished - 1995

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