Design of an RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF Transceivers

Ana Isabel Santos; João Pedro Oliveira

doi:10.1109/YEF-ECE58420.2023.10209328

Design of an RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF Transceivers

Ana Isabel Santos, João Pedro Oliveira

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

The paper presents the implementation of a Switched Capacitor Power Amplifier (SCPA) to be integrated into a Narrowband Internet of Things (NB-IoT) Transceiver. The SCPA is designed to operate at a frequency of 0.9GHz and aiming the maximum output power allowed by the standard of 23dBm. All the blocks within the SCPA were developed using RF components of a standard 130nm CMOS process, with a 1.2V/2.4V supply voltage. Results show that the SCPA is able to produce a maximum output power of 15.61dBm with a maximum Power-Added Efficiency (PAE) of 26.52% and a Total Harmonic Distortion (THD) of 0.68%. The measured HD2 and HD3 are-70.23dBc and-43.41dBc, respectively. Additional Process, Voltage and Temperature (PVT) corners and Monte Carlo simulations indicate the SCPA operates properly when subject to different conditions and mismatches. Besides the SCPA, a 16 QAM modulation stage is designed in VerilogA in order to evaluate the performance of the RF PA when a sequence of symbols is transmitted.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	2023 International Young Engineers Forum in Electrical and Computer Engineering (YEF-ECE)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	43-48
Number of pages	6
ISBN (Electronic)	979-8-3503-0042-0
ISBN (Print)	979-8-3503-0043-7
DOIs	https://doi.org/10.1109/YEF-ECE58420.2023.10209328
Publication status	Published - 2023
Event	2023 International Young Engineers Forum in Electrical and Computer Engineering - Caparica, Lisbon, Portugal Duration: 7 Jul 2023 → 7 Jul 2023

Conference

Conference	2023 International Young Engineers Forum in Electrical and Computer Engineering
Abbreviated title	YEF-ECE 2023
Country/Territory	Portugal
City	Lisbon
Period	7/07/23 → 7/07/23

Keywords

Cascoded Class-D
CMOS
PAE
SCPA
THD

Access to Document

10.1109/YEF-ECE58420.2023.10209328

Cite this

@inproceedings{826dfefd70a348d08cf7312aa932d160,

title = "Design of an RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF Transceivers",

abstract = "The paper presents the implementation of a Switched Capacitor Power Amplifier (SCPA) to be integrated into a Narrowband Internet of Things (NB-IoT) Transceiver. The SCPA is designed to operate at a frequency of 0.9GHz and aiming the maximum output power allowed by the standard of 23dBm. All the blocks within the SCPA were developed using RF components of a standard 130nm CMOS process, with a 1.2V/2.4V supply voltage. Results show that the SCPA is able to produce a maximum output power of 15.61dBm with a maximum Power-Added Efficiency (PAE) of 26.52% and a Total Harmonic Distortion (THD) of 0.68%. The measured HD2 and HD3 are-70.23dBc and-43.41dBc, respectively. Additional Process, Voltage and Temperature (PVT) corners and Monte Carlo simulations indicate the SCPA operates properly when subject to different conditions and mismatches. Besides the SCPA, a 16 QAM modulation stage is designed in VerilogA in order to evaluate the performance of the RF PA when a sequence of symbols is transmitted.",

keywords = "Cascoded Class-D, CMOS, PAE, SCPA, THD",

author = "Santos, {Ana Isabel} and Oliveira, {Jo{\~a}o Pedro}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE. This work was financially supported by FCT (National Foundation of Science and Technology) within the Research Unit CTS, UIDB/00066/2020, and the Project foRESTER (PCIF/SSI/0102/2017) ; 2023 International Young Engineers Forum in Electrical and Computer Engineering<br/>, YEF-ECE 2023 ; Conference date: 07-07-2023 Through 07-07-2023",

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doi = "10.1109/YEF-ECE58420.2023.10209328",

language = "English",

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Santos, AI & Oliveira, JP 2023, Design of an RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF Transceivers. in Proceedings: 2023 International Young Engineers Forum in Electrical and Computer Engineering (YEF-ECE). Institute of Electrical and Electronics Engineers (IEEE), pp. 43-48, 2023 International Young Engineers Forum in Electrical and Computer Engineering
, Lisbon, Portugal, 7/07/23. https://doi.org/10.1109/YEF-ECE58420.2023.10209328

Design of an RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF Transceivers. / Santos, Ana Isabel ; Oliveira, João Pedro.
Proceedings: 2023 International Young Engineers Forum in Electrical and Computer Engineering (YEF-ECE). Institute of Electrical and Electronics Engineers (IEEE), 2023. p. 43-48.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design of an RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF Transceivers

AU - Santos, Ana Isabel

AU - Oliveira, João Pedro

N1 - Publisher Copyright: © 2023 IEEE. This work was financially supported by FCT (National Foundation of Science and Technology) within the Research Unit CTS, UIDB/00066/2020, and the Project foRESTER (PCIF/SSI/0102/2017)

PY - 2023

Y1 - 2023

N2 - The paper presents the implementation of a Switched Capacitor Power Amplifier (SCPA) to be integrated into a Narrowband Internet of Things (NB-IoT) Transceiver. The SCPA is designed to operate at a frequency of 0.9GHz and aiming the maximum output power allowed by the standard of 23dBm. All the blocks within the SCPA were developed using RF components of a standard 130nm CMOS process, with a 1.2V/2.4V supply voltage. Results show that the SCPA is able to produce a maximum output power of 15.61dBm with a maximum Power-Added Efficiency (PAE) of 26.52% and a Total Harmonic Distortion (THD) of 0.68%. The measured HD2 and HD3 are-70.23dBc and-43.41dBc, respectively. Additional Process, Voltage and Temperature (PVT) corners and Monte Carlo simulations indicate the SCPA operates properly when subject to different conditions and mismatches. Besides the SCPA, a 16 QAM modulation stage is designed in VerilogA in order to evaluate the performance of the RF PA when a sequence of symbols is transmitted.

AB - The paper presents the implementation of a Switched Capacitor Power Amplifier (SCPA) to be integrated into a Narrowband Internet of Things (NB-IoT) Transceiver. The SCPA is designed to operate at a frequency of 0.9GHz and aiming the maximum output power allowed by the standard of 23dBm. All the blocks within the SCPA were developed using RF components of a standard 130nm CMOS process, with a 1.2V/2.4V supply voltage. Results show that the SCPA is able to produce a maximum output power of 15.61dBm with a maximum Power-Added Efficiency (PAE) of 26.52% and a Total Harmonic Distortion (THD) of 0.68%. The measured HD2 and HD3 are-70.23dBc and-43.41dBc, respectively. Additional Process, Voltage and Temperature (PVT) corners and Monte Carlo simulations indicate the SCPA operates properly when subject to different conditions and mismatches. Besides the SCPA, a 16 QAM modulation stage is designed in VerilogA in order to evaluate the performance of the RF PA when a sequence of symbols is transmitted.

KW - Cascoded Class-D

KW - CMOS

KW - PAE

KW - SCPA

KW - THD

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U2 - 10.1109/YEF-ECE58420.2023.10209328

DO - 10.1109/YEF-ECE58420.2023.10209328

M3 - Conference contribution

AN - SCOPUS:85168866136

SN - 979-8-3503-0043-7

SP - 43

EP - 48

BT - Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2023 International Young Engineers Forum in Electrical and Computer Engineering<br/>

Y2 - 7 July 2023 through 7 July 2023

ER -

Design of an RF-CMOS Switched-Capacitor Power Amplifier for NB-IoT RF Transceivers

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Keywords

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