Design of a robust general-purpose low-offset comparator based on IGZO thin-film transistors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents a low-offset comparator based on n-type amorphous indium gallium zinc oxide thin-film transistors (TFTs). An a-Si:H TFT model was adapted to fit the electrical characterization data obtained for these devices. The proposed comparator comprises three pre-amplification stages, a positive-feedback analog latch and a fully dynamic digital latch. Simulation results show that the proposed circuit can work at several tens of kHz, with an accuracy of the order of 10 mV, considering a supply voltage of 10 V and a current consumption of 380 μA. Monte-Carlo simulations exhibit a 1-sigma random offset voltage smaller than 10 mV and 40 mV, respectively, with and without using autozeroing techniques.

Original languageEnglish
Title of host publication2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages261-264
Number of pages4
Volume2015-July
ISBN (Electronic)978-1-4799-8391-9
DOIs
Publication statusPublished - 27 Jul 2015
EventIEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal
Duration: 24 May 201527 May 2015

Conference

ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 2015
CountryPortugal
CityLisbon
Period24/05/1527/05/15

Keywords

  • a-IGZO TFTs
  • Comparator
  • Low offset
  • Modeling
  • Monte-Carlo

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