TY - JOUR
T1 - Dependence of optical properties on composition of silicon carbonitride thin films deposited at low temperature by PECVD
AU - Lavareda, Guilherme
AU - Vygranenko, Yuri
AU - Amaral, Ana
AU - Nunes de Carvalho, Carlos
AU - Barradas, Nuno Pessoa
AU - Alves, Eduardo
AU - Brogueira, Pedro
N1 - info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UID%2FCTM%2F04540%2F2019/PT#
info:eu-repo/grantAgreement/FCT/9471 - RIDTI/PTDC%2FNAN-OPT%2F31311%2F2017/PT#
.
PY - 2021/1/1
Y1 - 2021/1/1
N2 - a-SiCN:H thin films were deposited at 150°C by PECVD using silane, methane and ammonia as precursor gases, with a SiH4:H2 dilution of 1:9. RBS and ERDA were used for determining material composition. The concentration of silicon, carbon and nitrogen in the deposited films was correlated with the respective precursor gas concentration and the incorporation yield of each atomic species was determined and related to the molecular bond energies of precursor gases. Chemical bonding type and density determined by FTIR were also related to the chemical composition of the films. Optical transmission was measured to estimate the optical gap (Eop) and refractive index (n) in the transparent region. Stoichiometric a-SiN has the lowest n (1.74) and highest Eop (4.12 eV) while a-Si:H presents the highest n (3.37) and lowest Eop (1.85 eV). A trade-off between the Eop and n is presented to show the applicability of this ternary material in optical devices.
AB - a-SiCN:H thin films were deposited at 150°C by PECVD using silane, methane and ammonia as precursor gases, with a SiH4:H2 dilution of 1:9. RBS and ERDA were used for determining material composition. The concentration of silicon, carbon and nitrogen in the deposited films was correlated with the respective precursor gas concentration and the incorporation yield of each atomic species was determined and related to the molecular bond energies of precursor gases. Chemical bonding type and density determined by FTIR were also related to the chemical composition of the films. Optical transmission was measured to estimate the optical gap (Eop) and refractive index (n) in the transparent region. Stoichiometric a-SiN has the lowest n (1.74) and highest Eop (4.12 eV) while a-Si:H presents the highest n (3.37) and lowest Eop (1.85 eV). A trade-off between the Eop and n is presented to show the applicability of this ternary material in optical devices.
KW - Chemical composition
KW - Hydrogenated amorphous silicon carbonitride
KW - Low temperature deposition
KW - Optical properties
KW - PECVD
KW - Transparent thin-films
UR - http://www.scopus.com/inward/record.url?scp=85092396548&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2020.120434
DO - 10.1016/j.jnoncrysol.2020.120434
M3 - Article
AN - SCOPUS:85092396548
SN - 0022-3093
VL - 551
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
M1 - 120434
ER -