The aim of this work is to present a model able to explain the role of the lateral drift current on the experimental behaviour exhibited by p-i-n amorphous silicon solar cells (J-V characteristics, responsivity and the apparent device degradation behaviour), when the ratio between the covered and uncovered metal collected areas of the device is higher than one or recrystallization occurs in the edges of the p-i-n junction.
|Number of pages||15|
|Journal||Solar Energy Materials and Solar Cells|
|Publication status||Published - 1 Jan 1997|
- Amorphous silicon
- I-V characteristics
- Semiconductor thin films
- Solar cells