Dependence of amorphous silicon solar cell performances on the lateral drift current

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Abstract

The aim of this work is to present a model able to explain the role of the lateral drift current on the experimental behaviour exhibited by p-i-n amorphous silicon solar cells (J-V characteristics, responsivity and the apparent device degradation behaviour), when the ratio between the covered and uncovered metal collected areas of the device is higher than one or recrystallization occurs in the edges of the p-i-n junction.

Original languageEnglish
Pages (from-to)1-15
Number of pages15
JournalSolar Energy Materials and Solar Cells
Volume45
Issue number1
Publication statusPublished - 1 Jan 1997

Keywords

  • Amorphous silicon
  • I-V characteristics
  • Semiconductor thin films
  • Solar cells

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