Decomposition of drain current in weak, moderate, and strong inversion components

I. M. Filanovsky; L. B. Oliveira; N. T. Tchamov

doi:10.1109/ICECS46596.2019.8964990

Decomposition of drain current in weak, moderate, and strong inversion components

I. M. Filanovsky, L. B. Oliveira, N. T. Tchamov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Using 'reconciliation' MOSFET model proposed by Y. Tsividis one can approximate the drain current as a sum of weak, moderate and strong inversion components. The paper analyses and compares the sensitivity of these components with respect to the threshold voltage. The nonlinear distortions of current for each component are also calculated. The components are described with polynomial and exponential dependencies, and this allows one to use modified Bessel functions for calculation of harmonic distortions without assumption of signal smallness.

Original language	English
Title of host publication	2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	827-830
Number of pages	4
ISBN (Electronic)	9781728109961
DOIs	https://doi.org/10.1109/ICECS46596.2019.8964990
Publication status	Published - Nov 2019
Event	26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 - Genoa, Italy Duration: 27 Nov 2019 → 29 Nov 2019

Conference

Conference	26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
Country/Territory	Italy
City	Genoa
Period	27/11/19 → 29/11/19

Keywords

Bias point sensitivity
Moderate inversion
MOS transistor model
Nonlinear distortions
Strong inversion
Weak inversion

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10.1109/ICECS46596.2019.8964990

Cite this

Filanovsky, I. M., Oliveira, L. B., & Tchamov, N. T. (2019). Decomposition of drain current in weak, moderate, and strong inversion components. In 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 (pp. 827-830). Article 8964990 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICECS46596.2019.8964990

@inproceedings{1c9e2db405e34c10976356bcbe6e3e78,

title = "Decomposition of drain current in weak, moderate, and strong inversion components",

abstract = "Using 'reconciliation' MOSFET model proposed by Y. Tsividis one can approximate the drain current as a sum of weak, moderate and strong inversion components. The paper analyses and compares the sensitivity of these components with respect to the threshold voltage. The nonlinear distortions of current for each component are also calculated. The components are described with polynomial and exponential dependencies, and this allows one to use modified Bessel functions for calculation of harmonic distortions without assumption of signal smallness.",

keywords = "Bias point sensitivity, Moderate inversion, MOS transistor model, Nonlinear distortions, Strong inversion, Weak inversion",

author = "Filanovsky, {I. M.} and Oliveira, {L. B.} and Tchamov, {N. T.}",

note = "This work was supported by NSERC, Canada, by Portuguese Foundation for Science and Technology, and by the Academy of Finland. Sem PDF conforme despacho.; 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 ; Conference date: 27-11-2019 Through 29-11-2019",

year = "2019",

month = nov,

doi = "10.1109/ICECS46596.2019.8964990",

language = "English",

pages = "827--830",

booktitle = "2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Filanovsky, IM, Oliveira, LB & Tchamov, NT 2019, Decomposition of drain current in weak, moderate, and strong inversion components. in 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019., 8964990, Institute of Electrical and Electronics Engineers (IEEE), pp. 827-830, 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, Genoa, Italy, 27/11/19. https://doi.org/10.1109/ICECS46596.2019.8964990

Decomposition of drain current in weak, moderate, and strong inversion components. / Filanovsky, I. M.; Oliveira, L. B.; Tchamov, N. T.
2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019. Institute of Electrical and Electronics Engineers (IEEE), 2019. p. 827-830 8964990.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Decomposition of drain current in weak, moderate, and strong inversion components

AU - Filanovsky, I. M.

AU - Oliveira, L. B.

AU - Tchamov, N. T.

N1 - This work was supported by NSERC, Canada, by Portuguese Foundation for Science and Technology, and by the Academy of Finland. Sem PDF conforme despacho.

PY - 2019/11

Y1 - 2019/11

N2 - Using 'reconciliation' MOSFET model proposed by Y. Tsividis one can approximate the drain current as a sum of weak, moderate and strong inversion components. The paper analyses and compares the sensitivity of these components with respect to the threshold voltage. The nonlinear distortions of current for each component are also calculated. The components are described with polynomial and exponential dependencies, and this allows one to use modified Bessel functions for calculation of harmonic distortions without assumption of signal smallness.

AB - Using 'reconciliation' MOSFET model proposed by Y. Tsividis one can approximate the drain current as a sum of weak, moderate and strong inversion components. The paper analyses and compares the sensitivity of these components with respect to the threshold voltage. The nonlinear distortions of current for each component are also calculated. The components are described with polynomial and exponential dependencies, and this allows one to use modified Bessel functions for calculation of harmonic distortions without assumption of signal smallness.

KW - Bias point sensitivity

KW - Moderate inversion

KW - MOS transistor model

KW - Nonlinear distortions

KW - Strong inversion

KW - Weak inversion

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DO - 10.1109/ICECS46596.2019.8964990

M3 - Conference contribution

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EP - 830

BT - 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019

Y2 - 27 November 2019 through 29 November 2019

ER -

Decomposition of drain current in weak, moderate, and strong inversion components

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Keywords

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