Decomposition of drain current in weak, moderate, and strong inversion components

I. M. Filanovsky, L. B. Oliveira, N. T. Tchamov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using 'reconciliation' MOSFET model proposed by Y. Tsividis one can approximate the drain current as a sum of weak, moderate and strong inversion components. The paper analyses and compares the sensitivity of these components with respect to the threshold voltage. The nonlinear distortions of current for each component are also calculated. The components are described with polynomial and exponential dependencies, and this allows one to use modified Bessel functions for calculation of harmonic distortions without assumption of signal smallness.

Original languageEnglish
Title of host publication2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages827-830
Number of pages4
ISBN (Electronic)9781728109961
DOIs
Publication statusPublished - Nov 2019
Event26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 - Genoa, Italy
Duration: 27 Nov 201929 Nov 2019

Conference

Conference26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019
CountryItaly
CityGenoa
Period27/11/1929/11/19

Keywords

  • Bias point sensitivity
  • Moderate inversion
  • MOS transistor model
  • Nonlinear distortions
  • Strong inversion
  • Weak inversion

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    Filanovsky, I. M., Oliveira, L. B., & Tchamov, N. T. (2019). Decomposition of drain current in weak, moderate, and strong inversion components. In 2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019 (pp. 827-830). [8964990] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS46596.2019.8964990