Cul p-type thin films for highly transparent thermoelectric p-n modules

Bruno Miguel Morais Faustino, Diogo Gomes, Jaime Faria, Taneli Juntunen, Guilherme Gaspar, Catarina Bianchi, António B. A. Almeida, Ana Marques, Ilkka Tittonen, Isabel Ferreira

Research output: Contribution to journalArticle

8 Citations (Scopus)
19 Downloads (Pure)

Abstract

Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm-1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
Original languageEnglish
Article number6867
JournalScientific Reports
Volume8
Issue number1
DOIs
Publication statusPublished - 2 May 2018

Keywords

  • OXIDE

Cite this

Faustino, Bruno Miguel Morais ; Gomes, Diogo ; Faria, Jaime ; Juntunen, Taneli ; Gaspar, Guilherme ; Bianchi, Catarina ; Almeida, António B. A. ; Marques, Ana ; Tittonen, Ilkka ; Ferreira, Isabel. / Cul p-type thin films for highly transparent thermoelectric p-n modules. In: Scientific Reports. 2018 ; Vol. 8, No. 1.
@article{9e685b23a8d044e198c5072815004a39,
title = "Cul p-type thin films for highly transparent thermoelectric p-n modules",
abstract = "Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70{\%} in the visible range), electrical (σ = 1.1 × 104 Sm-1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.",
keywords = "OXIDE",
author = "Faustino, {Bruno Miguel Morais} and Diogo Gomes and Jaime Faria and Taneli Juntunen and Guilherme Gaspar and Catarina Bianchi and Almeida, {Ant{\'o}nio B. A.} and Ana Marques and Ilkka Tittonen and Isabel Ferreira",
note = "info:eu-repo/grantAgreement/EC/H2020/647596/EU# info:eu-repo/grantAgreement/EC/H2020/645241/EU# info:eu-repo/grantAgreement/FCT/5876/147333/PT# This work was mainly funded by H2020-ICT-2014-1, RIA, TransFlexTeg-645241, and ERC-CoG-2014, CapTherPV, 647596, and partially funded by FEDER funds through the COMPETE 2020 Program and National Funds through FCT - Portuguese Foundation for Science and Technology under the project UID/CTM/50025/2013.",
year = "2018",
month = "5",
day = "2",
doi = "10.1038/s41598-018-25106-3",
language = "English",
volume = "8",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

Cul p-type thin films for highly transparent thermoelectric p-n modules. / Faustino, Bruno Miguel Morais; Gomes, Diogo; Faria, Jaime; Juntunen, Taneli; Gaspar, Guilherme; Bianchi, Catarina; Almeida, António B. A.; Marques, Ana; Tittonen, Ilkka; Ferreira, Isabel.

In: Scientific Reports, Vol. 8, No. 1, 6867, 02.05.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cul p-type thin films for highly transparent thermoelectric p-n modules

AU - Faustino, Bruno Miguel Morais

AU - Gomes, Diogo

AU - Faria, Jaime

AU - Juntunen, Taneli

AU - Gaspar, Guilherme

AU - Bianchi, Catarina

AU - Almeida, António B. A.

AU - Marques, Ana

AU - Tittonen, Ilkka

AU - Ferreira, Isabel

N1 - info:eu-repo/grantAgreement/EC/H2020/647596/EU# info:eu-repo/grantAgreement/EC/H2020/645241/EU# info:eu-repo/grantAgreement/FCT/5876/147333/PT# This work was mainly funded by H2020-ICT-2014-1, RIA, TransFlexTeg-645241, and ERC-CoG-2014, CapTherPV, 647596, and partially funded by FEDER funds through the COMPETE 2020 Program and National Funds through FCT - Portuguese Foundation for Science and Technology under the project UID/CTM/50025/2013.

PY - 2018/5/2

Y1 - 2018/5/2

N2 - Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm-1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.

AB - Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm-1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.

KW - OXIDE

U2 - 10.1038/s41598-018-25106-3

DO - 10.1038/s41598-018-25106-3

M3 - Article

VL - 8

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 6867

ER -