Cul p-type thin films for highly transparent thermoelectric p-n modules

Bruno Miguel Morais Faustino, Diogo Gomes, Jaime Faria, Taneli Juntunen, Guilherme Gaspar, Catarina Bianchi, António B. A. Almeida, Ana Marques, Ilkka Tittonen, Isabel Ferreira

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Abstract

Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm-1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
Original languageEnglish
Article number6867
JournalScientific Reports
Volume8
Issue number1
DOIs
Publication statusPublished - 2 May 2018

Keywords

  • OXIDE

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