TY - JOUR
T1 - Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering
AU - Gonçalves, G
AU - Barquinha, Pedro Miguel Cândido
AU - Raniero, Leandro
AU - Martins, Rodrigo Ferrão de Paiva
AU - Fortunato, Elvira Maria Correia
PY - 2008/2/15
Y1 - 2008/2/15
N2 - In this work we studied indium zinc oxide (IZO) thin films deposited by r.f magnetron sputtering at room temperature. The films were annealed at high temperature (1100 K) in vacuum, and the oxygen exodiffusion was monitored in-situ. The results showed three main peaks, one at approximately 600 K, other at approximately 850 K and the last one at 940 K, which are probably from oxygen bonded in the film surface and in the bulk, respectively. The initial amorphous structure becomes microcrystalline, according to the X-ray diffraction. The electrical conductivity of the films decreases (about 3 orders of magnitude), after the annealing treatment.
AB - In this work we studied indium zinc oxide (IZO) thin films deposited by r.f magnetron sputtering at room temperature. The films were annealed at high temperature (1100 K) in vacuum, and the oxygen exodiffusion was monitored in-situ. The results showed three main peaks, one at approximately 600 K, other at approximately 850 K and the last one at 940 K, which are probably from oxygen bonded in the film surface and in the bulk, respectively. The initial amorphous structure becomes microcrystalline, according to the X-ray diffraction. The electrical conductivity of the films decreases (about 3 orders of magnitude), after the annealing treatment.
U2 - 10.1016/j.tsf.2007.03.087
DO - 10.1016/j.tsf.2007.03.087
M3 - Article
SN - 0040-6090
VL - 516
SP - 1374
EP - 1376
JO - Thin Solid Films
JF - Thin Solid Films
IS - 7
ER -