Abstract
The authors regret that the MoO3 crystal structure used as input in the RaDMaX software to simulate the XRD curves, presented in the paper mentioned above, contained a mistake in the atomic positions. The re-analysis of the data, using the correct structure, led to some changes in the absolute values of the static Debye-Waller factors, which affected the figures 2, 3 and 5. The corrected figures are shown below. These corrections do not change any of the conclusions or discussions. The authors would like to apologise for any inconvenience caused.
| Original language | English |
|---|---|
| Pages (from-to) | 425-428 |
| Number of pages | 4 |
| Journal | Acta Materialia |
| Volume | 199 |
| DOIs |
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| Publication status | Published - 15 Oct 2020 |
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Dive into the research topics of 'Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))'. Together they form a unique fingerprint.Cite this
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