Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))

Daniela R. Pereira, Carlos Díaz-Guerra, Marco Peres, Sérgio Magalhães, João Guilherme Correia, José G. Marques, Ana G. Silva, Eduardo Alves, Katharina Lorenz

Research output: Contribution to journalComment/debatepeer-review

Abstract

The authors regret that the MoO3 crystal structure used as input in the RaDMaX software to simulate the XRD curves, presented in the paper mentioned above, contained a mistake in the atomic positions. The re-analysis of the data, using the correct structure, led to some changes in the absolute values of the static Debye-Waller factors, which affected the figures 2, 3 and 5. The corrected figures are shown below. These corrections do not change any of the conclusions or discussions. The authors would like to apologise for any inconvenience caused.

Original languageEnglish
Pages (from-to)425-428
Number of pages4
JournalActa Materialia
Volume199
DOIs
Publication statusPublished - 15 Oct 2020

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