Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))

Daniela R. Pereira; Carlos Díaz-Guerra; Marco Peres; Sérgio Magalhães; João Guilherme Correia; José G. Marques; Ana G. Silva; Eduardo Alves; Katharina Lorenz

doi:10.1016/j.actamat.2020.08.050

Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))

Daniela R. Pereira, Carlos Díaz-Guerra, Marco Peres, Sérgio Magalhães, João Guilherme Correia, José G. Marques, Ana G. Silva, Eduardo Alves, Katharina Lorenz

Research output: Contribution to journal › Comment/debate › peer-review

1 Citation (Scopus)

Abstract

The authors regret that the MoO₃ crystal structure used as input in the RaDMaX software to simulate the XRD curves, presented in the paper mentioned above, contained a mistake in the atomic positions. The re-analysis of the data, using the correct structure, led to some changes in the absolute values of the static Debye-Waller factors, which affected the figures 2, 3 and 5. The corrected figures are shown below. These corrections do not change any of the conclusions or discussions. The authors would like to apologise for any inconvenience caused.

Original language	English
Pages (from-to)	425-428
Number of pages	4
Journal	Acta Materialia
Volume	199
DOIs	https://doi.org/10.1016/j.actamat.2020.08.050
Publication status	Published - 15 Oct 2020

Access to Document

10.1016/j.actamat.2020.08.050

Fingerprint

Dive into the research topics of 'Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))'. Together they form a unique fingerprint.

Cite this

Pereira, D. R., Díaz-Guerra, C., Peres, M., Magalhães, S., Correia, J. G., Marques, J. G., Silva, A. G., Alves, E., & Lorenz, K. (2020). Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029)). Acta Materialia, 199, 425-428. https://doi.org/10.1016/j.actamat.2020.08.050

@article{90c8d11e2d1d424a92067a4932953866,

title = "Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))",

abstract = "The authors regret that the MoO3 crystal structure used as input in the RaDMaX software to simulate the XRD curves, presented in the paper mentioned above, contained a mistake in the atomic positions. The re-analysis of the data, using the correct structure, led to some changes in the absolute values of the static Debye-Waller factors, which affected the figures 2, 3 and 5. The corrected figures are shown below. These corrections do not change any of the conclusions or discussions. The authors would like to apologise for any inconvenience caused.",

author = "Pereira, {Daniela R.} and Carlos D{\'i}az-Guerra and Marco Peres and S{\'e}rgio Magalh{\~a}es and Correia, {Jo{\~a}o Guilherme} and Marques, {Jos{\'e} G.} and Silva, {Ana G.} and Eduardo Alves and Katharina Lorenz",

year = "2020",

month = oct,

day = "15",

doi = "10.1016/j.actamat.2020.08.050",

language = "English",

volume = "199",

pages = "425--428",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "PERGAMON-ELSEVIER SCIENCE LTD",

}

Pereira, DR, Díaz-Guerra, C, Peres, M, Magalhães, S, Correia, JG, Marques, JG, Silva, AG, Alves, E & Lorenz, K 2020, 'Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))', Acta Materialia, vol. 199, pp. 425-428. https://doi.org/10.1016/j.actamat.2020.08.050

Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029)). / Pereira, Daniela R.; Díaz-Guerra, Carlos; Peres, Marco et al.
In: Acta Materialia, Vol. 199, 15.10.2020, p. 425-428.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))

AU - Pereira, Daniela R.

AU - Díaz-Guerra, Carlos

AU - Peres, Marco

AU - Magalhães, Sérgio

AU - Correia, João Guilherme

AU - Marques, José G.

AU - Silva, Ana G.

AU - Alves, Eduardo

AU - Lorenz, Katharina

PY - 2020/10/15

Y1 - 2020/10/15

N2 - The authors regret that the MoO3 crystal structure used as input in the RaDMaX software to simulate the XRD curves, presented in the paper mentioned above, contained a mistake in the atomic positions. The re-analysis of the data, using the correct structure, led to some changes in the absolute values of the static Debye-Waller factors, which affected the figures 2, 3 and 5. The corrected figures are shown below. These corrections do not change any of the conclusions or discussions. The authors would like to apologise for any inconvenience caused.

AB - The authors regret that the MoO3 crystal structure used as input in the RaDMaX software to simulate the XRD curves, presented in the paper mentioned above, contained a mistake in the atomic positions. The re-analysis of the data, using the correct structure, led to some changes in the absolute values of the static Debye-Waller factors, which affected the figures 2, 3 and 5. The corrected figures are shown below. These corrections do not change any of the conclusions or discussions. The authors would like to apologise for any inconvenience caused.

UR - http://www.scopus.com/inward/record.url?scp=85090043346&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2020.08.050

DO - 10.1016/j.actamat.2020.08.050

M3 - Comment/debate

AN - SCOPUS:85090043346

SN - 1359-6454

VL - 199

SP - 425

EP - 428

JO - Acta Materialia

JF - Acta Materialia

ER -

Corrigendum to: “Engineering strain and conductivity of MoO3 by ion implantation” [Acta Mater 169 (2019) 15-27] ( Acta Materialia (2019) 169 (15-27) (S1359645419301156), (10.1016/j.actamat.2019.02.029))

Abstract

Access to Document

Other files and links

Fingerprint

Cite this