Correlation between surface/interface states and the performance of MIS structures

H. M B Águas, E. M C Fortunato, A. M. Cabrita, V. Silva, P. M N Tonello, R. F P Martins

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In order to understand the kinetics of formation of interface/surface states and its correlation on the final device performance, a preliminary study was performed on MIS structures, before and after surface oxidation/passivation, using different oxidation techniques and oxides: thermal (in air), chemical (in H2O2) and oxygen plasma. The devices used in this work are based on a glass/Cr/a-Si:H(n+)/a-Si:H(i)/SiOx/Pd structures, where the amorphous silicon intrinsic layer (i a-Si:H) with a photosensitivity of 107 was deposited by a modified plasma enhanced chemical vapour deposition (PECVD) triode system. The electrical properties of a-Si:H MIS structures were investigated by measuring their diode current-voltage characteristics in the dark and under illumination as well as the spectral response, as a function of the various oxidation techniques. Infrared spectroscopy and spectroscopic ellipsometry were used as a complementary tool to characterise the oxidised surface.

Original languageEnglish
Pages (from-to)A1211-A1216
Number of pages6
JournalMRS Proceedings
Publication statusPublished - 2000


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