Correlation between electrical-optical and structural properties of microcrystalline silicon N type films

R. Martins, A. Macarico, I. Ferreira, R. Nunes, A. Bicho, E. Fortunato

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Wide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type μc-Si based films. Here, emphasis is given to the production of n-type μc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1.

Original languageEnglish
Pages (from-to)807-812
Number of pages6
JournalMRS Proceedings
Volume420
Publication statusPublished - 1996

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