TY - JOUR
T1 - Correction to: Nontoxic, Eco-friendly Fully Water-Induced Ternary Zr-Gd-O Dielectric for High-Performance Transistors and Unipolar Inverters (Advanced Electronic Materials, (2018), 4, 5, (1800100), 10.1002/aelm.201800100)
AU - Zhu, Li
AU - He, Gang
AU - Li, Wendong
AU - Yang, Bing
AU - Fortunato, Elvira
AU - Martins, Rodrigo
PY - 2018/11/1
Y1 - 2018/11/1
N2 - Adv. Electron. Mater. 2018, 4, 1800100 The initially published version of the manuscript unfortunately contains an error in figure 4, which does not affect the scientific conclusions of the work. The correct figure should look as follows: Figure 4. a) Optical transmittances of the WI ZrGdOx thin films annealed at different temperatures. b) The Tauc plots of the corresponding ZrGdOx thin films annealed at various temperatures. The authors apologize for any inconvenience or misunderstanding that this error may have caused.
AB - Adv. Electron. Mater. 2018, 4, 1800100 The initially published version of the manuscript unfortunately contains an error in figure 4, which does not affect the scientific conclusions of the work. The correct figure should look as follows: Figure 4. a) Optical transmittances of the WI ZrGdOx thin films annealed at different temperatures. b) The Tauc plots of the corresponding ZrGdOx thin films annealed at various temperatures. The authors apologize for any inconvenience or misunderstanding that this error may have caused.
KW - Thin film transistors
KW - Gallium
KW - Gallium zinc
UR - http://www.scopus.com/inward/record.url?scp=85056127009&partnerID=8YFLogxK
U2 - 10.1002/aelm.201800507
DO - 10.1002/aelm.201800507
M3 - Comment/debate
C2 - 25855820
AN - SCOPUS:85056127009
SN - 2199-160X
VL - 4
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 11
M1 - 1800507
ER -