Correction to: Nontoxic, Eco-friendly Fully Water-Induced Ternary Zr-Gd-O Dielectric for High-Performance Transistors and Unipolar Inverters (Advanced Electronic Materials, (2018), 4, 5, (1800100), 10.1002/aelm.201800100)

Li Zhu, Gang He, Wendong Li, Bing Yang, Elvira Fortunato, Rodrigo Martins

Research output: Contribution to journalComment/debate

2 Citations (Scopus)

Abstract

Adv. Electron. Mater. 2018, 4, 1800100 The initially published version of the manuscript unfortunately contains an error in figure 4, which does not affect the scientific conclusions of the work. The correct figure should look as follows: Figure 4. a) Optical transmittances of the WI ZrGdOx thin films annealed at different temperatures. b) The Tauc plots of the corresponding ZrGdOx thin films annealed at various temperatures. The authors apologize for any inconvenience or misunderstanding that this error may have caused.

Original languageEnglish
Article number1800507
JournalAdvanced Electronic Materials
Volume4
Issue number11
DOIs
Publication statusPublished - 1 Nov 2018

Keywords

  • Thin film transistors
  • Gallium
  • Gallium zinc

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