TY - JOUR
T1 - Copper-Arsenic-Sulfide Thin-Films from Local Raw Materials Deposited via RF Co-Sputtering for Photovoltaics
AU - Centeno, Pedro
AU - Alexandre, Miguel
AU - Neves, Filipe
AU - Fortunato, Elvira
AU - Martins, Rodrigo
AU - Águas, Hugo
AU - Mendes, Manuel J.
N1 - info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F50025%2F2020/PT#
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F50025%2F2020/PT#
info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FEAM-PEC%2F29905%2F2017/PT#
info:eu-repo/grantAgreement/FCT/3599-PPCDT/PTDC%2FNAN-OPT%2F28837%2F2017/PT#
info:eu-repo/grantAgreement/EC/H2020/952169/EU#
info:eu-repo/grantAgreement/FCT/OE/SFRH%2FBD%2F148078%2F2019/PT#
LA/P/0037/2020
DFA/BD/7882/2020
PY - 2022/10
Y1 - 2022/10
N2 - The inexorable increase of energy demand and the efficiency bottleneck of monocrystalline silicon solar cell technology is promoting the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are still rather unexplored in the literature, yet they have been regarded as promising candidates for use as p-type absorber in solar cells, owing to their broad raw material availability, suitable bandgap and high absorption coefficient. Here, a comprehensive study is presented on the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using a commercial Cu target together with a Cu-As-S target with material obtained from local resources, specifically from mines in the Portuguese region of the Iberian Pyrite Belt. Raman and X-ray diffraction analysis confirm that the use of two targets results in films with pronounced stoichiometry gradients, suggesting a transition from amorphous CAS compounds to crystalline djurleite (Cu31S16), with the increasing proximity to the Cu target. Resistivity values from 4.7 mΩ·cm to 17.4 Ω·cm are obtained, being the lowest resistive films, those with pronounced sub-bandgap free-carrier absorption. The bandgap values range from 2.20 to 2.65 eV, indicating promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices.
AB - The inexorable increase of energy demand and the efficiency bottleneck of monocrystalline silicon solar cell technology is promoting the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are still rather unexplored in the literature, yet they have been regarded as promising candidates for use as p-type absorber in solar cells, owing to their broad raw material availability, suitable bandgap and high absorption coefficient. Here, a comprehensive study is presented on the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using a commercial Cu target together with a Cu-As-S target with material obtained from local resources, specifically from mines in the Portuguese region of the Iberian Pyrite Belt. Raman and X-ray diffraction analysis confirm that the use of two targets results in films with pronounced stoichiometry gradients, suggesting a transition from amorphous CAS compounds to crystalline djurleite (Cu31S16), with the increasing proximity to the Cu target. Resistivity values from 4.7 mΩ·cm to 17.4 Ω·cm are obtained, being the lowest resistive films, those with pronounced sub-bandgap free-carrier absorption. The bandgap values range from 2.20 to 2.65 eV, indicating promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices.
KW - copper arsenic sulfide compounds
KW - photovoltaic materials
KW - RF co-sputtering
KW - thin-film semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85139937873&partnerID=8YFLogxK
U2 - 10.3390/nano12193268
DO - 10.3390/nano12193268
M3 - Article
C2 - 36234397
AN - SCOPUS:85139937873
SN - 2079-4991
VL - 12
JO - Nanomaterials
JF - Nanomaterials
IS - 19
M1 - 3268
ER -