Control of eu oxidation state in Y2O3-xSx:Eu thin-film phosphors prepared by atomic layer deposition: A structural and photoluminescence study

José Rosa; Jonas Deuermeier; Pekka J. Soininen; Markus Bosund; Zhen Zhu; Elvira Fortunato; Rodrigo Martins; Mutsumi Sugiyama; Saoussen Merdes

doi:10.3390/ma13010093

Control of eu oxidation state in Y₂O₃-xSx:Eu thin-film phosphors prepared by atomic layer deposition: A structural and photoluminescence study

José Rosa, Jonas Deuermeier, Pekka J. Soininen, Markus Bosund, Zhen Zhu, Elvira Fortunato, Rodrigo Martins, Mutsumi Sugiyama, Saoussen Merdes

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Abstract

Structural and photoluminescence studies were carried out on Eu-doped Y₂O_3-xS_x thin films grown by atomic layer deposition at 300 °C. (CH₃Cp)₃Y, H₂O, and H₂S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)₃ was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)₃ pulse with either a H₂S or O₃ pulse. The Eu(thd)₃/O₃ pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)₃/H₂S pulse sequence resulted in emission below 500 nm.

Original language	English
Article number	93
Journal	Materials
Volume	13
Issue number	1
DOIs	https://doi.org/10.3390/ma13010093
Publication status	Published - 1 Jan 2020

Keywords

Eu oxidation state
Phosphor
Photoluminescence
YOS:Eu

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materials-13-00093-v2Final published version, 1.83 MBLicence: CC BY

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title = "Control of eu oxidation state in Y2O3-xSx:Eu thin-film phosphors prepared by atomic layer deposition: A structural and photoluminescence study",

abstract = "Structural and photoluminescence studies were carried out on Eu-doped Y2O3-xSx thin films grown by atomic layer deposition at 300 °C. (CH3Cp)3Y, H2O, and H2S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)3 was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)3 pulse with either a H2S or O3 pulse. The Eu(thd)3/O3 pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)3/H2S pulse sequence resulted in emission below 500 nm.",

keywords = "Eu oxidation state, Phosphor, Photoluminescence, YOS:Eu",

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AU - Rosa, José

AU - Deuermeier, Jonas

AU - Soininen, Pekka J.

AU - Bosund, Markus

AU - Zhu, Zhen

AU - Fortunato, Elvira

AU - Martins, Rodrigo

AU - Sugiyama, Mutsumi

AU - Merdes, Saoussen

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N2 - Structural and photoluminescence studies were carried out on Eu-doped Y2O3-xSx thin films grown by atomic layer deposition at 300 °C. (CH3Cp)3Y, H2O, and H2S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)3 was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)3 pulse with either a H2S or O3 pulse. The Eu(thd)3/O3 pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)3/H2S pulse sequence resulted in emission below 500 nm.

AB - Structural and photoluminescence studies were carried out on Eu-doped Y2O3-xSx thin films grown by atomic layer deposition at 300 °C. (CH3Cp)3Y, H2O, and H2S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)3 was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)3 pulse with either a H2S or O3 pulse. The Eu(thd)3/O3 pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)3/H2S pulse sequence resulted in emission below 500 nm.

KW - Eu oxidation state

KW - Phosphor

KW - Photoluminescence

KW - YOS:Eu

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ER -

Control of eu oxidation state in Y₂O₃-xSx:Eu thin-film phosphors prepared by atomic layer deposition: A structural and photoluminescence study

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Keywords

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