@article{d42380782cde4af9b7e0c3cd7c11c2dc,
title = "Complementary Metal Oxide Semiconductor Technology With and On Paper",
abstract = "A complementary metal oxide semiconductor (CMOS) deviceis described. The device is based on n-(In-Ga-Zn-O) and p-type (SnOx) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric.",
keywords = "BEHAVIOR, THIN-FILM TRANSISTORS, SILICON, POWER, CIRCUITS, DEVICES, GATE DIELECTRICS, ELECTRONICS, ROOM-TEMPERATURE, FIELD-EFFECT TRANSISTORS",
author = "Fortunato, {Elvira Maria Correia} and Ferreira, {Isabel Maria Merc{\^e}s} and Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Pereira, {Luis Miguel Nunes}",
year = "2011",
month = jan,
day = "1",
doi = "10.1002/adma.201102232",
language = "Unknown",
volume = "23",
pages = "4491--4496",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "John Wiley & Sons, Ltd.",
number = "39",
}