A complementary metal oxide semiconductor (CMOS) deviceis described. The device is based on n-(In-Ga-Zn-O) and p-type (SnOx) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric.
Original languageUnknown
Pages (from-to)4491-4496
JournalAdvanced Materials
Issue number39
Publication statusPublished - 1 Jan 2011

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