Using the Flying Spot Technique (FST) we have studied minority carrier transport parallel and perpendicular to the surface of amorphous silicon films (a-Si:H). To reduce slow transients due to charge redistribution in low resistivity regions during the measurement we have applied a strong homogeneously absorbed bias light. The defect density was estimated from CPM measurements. The steady-state photocarrier grating technique (SSPG) is a 1-dimensional approach. However, the modulation depth of the carrier profile is also dependent on film surface properties, like surface recombination velocity. Both methods yield comparable diffusion lengths when applied to a-Si:H.
|Number of pages||4|
|Journal||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Publication status||Published - 1 Dec 1994|
|Event||24th IEEE Photovoltaic Specialists Conference - Waikoloa, United States|
Duration: 5 Dec 1994 → 9 Dec 1994