Comparison of diffusion length measurements from the flying spot technique and the photocarrier grating method in amorphous thin films

M. Vieira, A. Fantoni, R. Martins, S. Koynov, F. Wang, S. Grebner, R. Schwarz

Research output: Contribution to journalConference article

Abstract

Using the Flying Spot Technique (FST) we have studied minority carrier transport parallel and perpendicular to the surface of amorphous silicon films (a-Si:H). To reduce slow transients due to charge redistribution in low resistivity regions during the measurement we have applied a strong homogeneously absorbed bias light. The defect density was estimated from CPM measurements. The steady-state photocarrier grating technique (SSPG) is a 1-dimensional approach. However, the modulation depth of the carrier profile is also dependent on film surface properties, like surface recombination velocity. Both methods yield comparable diffusion lengths when applied to a-Si:H.

Original languageEnglish
Pages (from-to)575-578
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Volume1
Publication statusPublished - 1 Dec 1994
Event24th IEEE Photovoltaic Specialists Conference - Waikoloa, United States
Duration: 5 Dec 19949 Dec 1994

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