Amorphous undoped a-Si:H films have been produced by hot wire plasma assisted chemical vapour deposition (HWPA-CVD), which combines the hot wire chemical vapour deposition (HW-CVD) and plasma enhanced chemical vapour deposition techniques. In this work we analyse the dissociation mechanism of the gas during the film growth in both processes with a quadrupole mass spectrometer. Besides that, the energy delivered to the gas dissociation is determined and correlated with the films properties. Thus, based on the results of the dissociated species for each deposition condition and process, we explain why the growth rate is enhanced when the filament temperature rises in HW-CVD process and why it decreases as r.f. power is enhanced in HWPA-CVD process.
- Energy delivered to gas dissociation
- HW-CVD process
- HWPA-CVD process
- Mass spectrometry