Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature

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Abstract

Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume763
Publication statusPublished - 8 Dec 2003
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States
Duration: 22 Apr 200325 Apr 2003

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