Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature

E. Fortunato; Victor Abreu  Assunção; A. Marques; I. Ferreira; H. Águas; L. Pereira; R. Martins

Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature

E. Fortunato, Victor Abreu Assunção, A. Marques, I. Ferreira, H. Águas, L. Pereira, R. Martins

Research output: Contribution to journal › Conference article › peer-review

Abstract

Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10^-4 Ωcm, a Hall mobility of 18 cm²/Vs and a carrier concentration of 1.3×10²¹ cm^-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.

Original language	English
Pages (from-to)	225-230
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	763
Publication status	Published - 8 Dec 2003
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

Cite this

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title = "Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature",

abstract = "Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.",

author = "E. Fortunato and Assun{\c c}{\~a}o, {Victor Abreu} and A. Marques and I. Ferreira and H. {\'A}guas and L. Pereira and R. Martins",

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language = "English",

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pages = "225--230",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

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TY - JOUR

T1 - Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature

AU - Fortunato, E.

AU - Assunção, Victor Abreu

AU - Marques, A.

AU - Ferreira, I.

AU - Águas, H.

AU - Pereira, L.

AU - Martins, R.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.

AB - Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.

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M3 - Conference article

AN - SCOPUS:0344927758

SN - 0272-9172

VL - 763

SP - 225

EP - 230

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics

Y2 - 22 April 2003 through 25 April 2003

ER -

Characterization of transparent and conductive ZnO:Ga thin films produced by rf sputtering at room temperature

Abstract

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