Characterization of SnO2: F thin films deposited by an economic spray pyrolysis technique

Fluorine doped tin oxide (FTO) semiconductor thin films were deposited on glass substrates using spray pyrolysis technique and the effect of fluorine (F-) doping (varying 0-30 at %) is explored. X-ray diffraction studies confirmed the tetragonal structure with polycrystalline nature. The crystallinity of undoped films is enhanced with the increase in F-doping. The films doped with 25 at % F show a strong orientation along (101) plane. The grain size of the undoped films (214 nm) is increased with the increase in F-doping level to reach a maximum of 415 nm (25 at % F). A minimum sheet resistance of similar to 5.4 Omega/square obtained for the 30 at % F doped films is among the lowest reported values. The average visible transmittance (400-700 nm) of the undoped films (61.4 %) is increased with the increasing F-doping to reach a maximum of 74.5 % (25 at %. F). The films doped with 25 at. % F showed high value of figure of merit (4.55 x 10(-3) Omega(-1)). The obtained results authenticate the influence of F-doping on the properties of the deposited films.