Fluorine doped tin oxide (FTO) semiconductor thin films were deposited on glass substrates using spray pyrolysis technique and the effect of fluorine (F-) doping (varying 0-30 at %) is explored. X-ray diffraction studies confirmed the tetragonal structure with polycrystalline nature. The crystallinity of undoped films is enhanced with the increase in F-doping. The films doped with 25 at % F show a strong orientation along (101) plane. The grain size of the undoped films (214 nm) is increased with the increase in F-doping level to reach a maximum of 415 nm (25 at % F). A minimum sheet resistance of similar to 5.4 Omega/square obtained for the 30 at % F doped films is among the lowest reported values. The average visible transmittance (400-700 nm) of the undoped films (61.4 %) is increased with the increasing F-doping to reach a maximum of 74.5 % (25 at %. F). The films doped with 25 at. % F showed high value of figure of merit (4.55 x 10(-3) Omega(-1)). The obtained results authenticate the influence of F-doping on the properties of the deposited films.
|Title of host publication||Physica Status Solidi C-Current Topics in Solid State Physics|
|Publication status||Published - 1 Jan 2010|
|Event||Spring Meeting of the European-Materials-Research-Society/Symposium F on Advances in Transparent Electronics-From Materials to Devices - |
Duration: 1 Jan 2009 → …
|Conference||Spring Meeting of the European-Materials-Research-Society/Symposium F on Advances in Transparent Electronics-From Materials to Devices|
|Period||1/01/09 → …|