Characterization of silicon carbide thin films prepared by VHF-PECVD technology

Chemistry

• Silicon Carbide 78%
• Chemical Vapour Deposition 63%
• Ion Impact 59%
• Electron Temperature 54%
• Amorphous Silicon 47%
• Plasma Enhanced Chemical Vapour Deposition 42%
• Bulk Density 41%
• Ellipsometry 38%
• Deposition Technique 38%
• Deposition Process 38%
• Density of State 37%
• Gas 37%
• Liquid Film 34%
• Silane 33%
• Valence 30%
• Mixture 30%
• Methane 27%
• Dissociation 25%
• Plasma 21%
• Electron Particle 19%
• Hydrogen 17%
• Reduction 16%
• Surface 11%

Engineering & Materials Science

• Plasma enhanced chemical vapor deposition 100%
• Silicon carbide 75%
• Thin films 66%
• Spectroscopic ellipsometry 42%
• Electron temperature 40%
• Amorphous silicon 32%
• Silanes 30%
• Phase composition 28%
• Gas mixtures 26%
• Controllability 24%
• Electrons 23%
• Methane 21%
• Plasmas 21%
• Ions 21%
• Hydrogen 18%
• Defects 16%
• Gases 13%

Physics & Astronomy

• silicon carbides 68%
• vapor deposition 54%
• characterization 39%
• thin films 36%
• photoelectronics 33%
• ion impact 30%
• controllability 27%
• silanes 25%
• ellipsometry 22%
• excitation 22%
• gas mixtures 22%
• amorphous silicon 21%
• methane 21%
• radio frequencies 20%
• dissociation 19%
• vapor phases 18%
• electron energy 17%
• valence 17%
• hydrogen 14%
• defects 13%
• electrons 9%