Characterization of silicon carbide thin films prepared by VHF-PECVD technology

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Abstract

A series of hydrogenated amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source and an excitation frequency of 27.12 MHz. Compared to the typical radio frequency deposition technique, the very high plasma excitation frequency increases the density of the electrons and decreases the electron temperature, which helps the dissociation of the SiH4 and CH4, and reduces the energetic ion impact on the growth surface of the thin film. Thus, dense-films with lower bulk density of states and higher growth rate are expected, as confirmed by spectroscopic ellipsometry data. Apart from that, a substantial reduction of bulk defects is achieved, allowing an improvement of the valence controllability (widening of the optical gap from about 1.9 to 3.6 eV). In this work results concerning the microstuctural and photoelectronic properties of the silicon carbide films will be discussed in detail, correlating them with the deposition process conditions used as well as with the gas phase composition of the mixtures used.
Original languageEnglish
Pages (from-to)530-533
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume338-340
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - 15 Jun 2004

Keywords

  • Amorphous silicon
  • Silicon carbide
  • Plasma enhanced chemical vapor deposition
  • Crystal defects
  • Electrons
  • Dissociation
  • Crystal microstructure
  • Ellipsometry
  • Mixtures
  • Hydrogenation
  • Spectroscopic analysis
  • Thin films

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