Characterisation of Ti/Al multilayered structures with slow positron beams applying a simplified positron depth distribution model

M. Duarte Naia, P. M. Gordo, O. M. N. D. Teodoro, A. P. de Lima, A. M. C. Moutinho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
9 Downloads (Pure)

Abstract

In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.

Original languageEnglish
Title of host publicationAdvanced Materials Forum V
EditorsLuis Guerra Rosa, Fernanda Margarido, Luis Guerra Rosa, Fernanda Margarido
PublisherTrans Tech Publications Ltd
Pages1097-1101
Number of pages5
ISBN (Print)0878492887, 9780878492886
DOIs
Publication statusPublished - 1 Jan 2010
Event5th International Materials Symposium MATERIAiS 2009 - 14th meeting of SPM - Sociedade Portuguesa de Materiais - Lisbon, Portugal
Duration: 5 Apr 20098 Apr 2009

Publication series

NameMaterials Science Forum
PublisherTrans Tech Publications Ltd
Volume636-637
ISSN (Print)0255-5476

Conference

Conference5th International Materials Symposium MATERIAiS 2009 - 14th meeting of SPM - Sociedade Portuguesa de Materiais
CountryPortugal
CityLisbon
Period5/04/098/04/09

Keywords

  • Interfaces
  • Multilayer
  • SIMS
  • Slow positron
  • Thin films

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