Bidimensional numerical analysis of a μc-Si:H P-I-N photodiode under local illumination

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Abstract

The behaviour of a microcrystalline p-i-n junction locally illuminated with monochromatic radiation (incident power of 50 mW/cm2) is analysed by means of numerical experiences. The model used for the two-dimensional analysis of the transport properties of a μc-Si:H p-i-n photo-detector is based on the simultaneous solution of the continuity equations for holes and electrons together with the Poisson's equation. The solution is found on a rectangular domain, taking into account the dimension perpendicular to the junction plane and one on the parallel plane. The lateral effects occurring within the structure, due to the non-uniformity of the illumination, are outlined. The results we present show that the potential profile has a linear variation from the illuminated to the dark neutral region. The lateral components of the electric field and of the current density vectors reveal to be mainly localised inside the doped layers.

Original languageEnglish
Pages (from-to)765-770
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume467
DOIs
Publication statusPublished - 1997
EventSymposium on Amorphous and Microcrystalline Silicon Technology - San Francisco, United States
Duration: 31 Mar 19974 Apr 1997

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