Bandlike Transport in FaPbBr3Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity

Rodrigo Ferreira, Monirul Shaikh, Suresh Kumar Jakka, Jonas Deuermeier, Pedro Barquinha, Saurabh Ghosh, Elvira Fortunato, Rodrigo Martins, Santanu Jana

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors have appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere. Here, we explore an FAPbBr3perovskite quantum dot (QD) phototransistor with bandlike charge transport and measure a dark hole mobility of 14.2 cm2V-1s-1at ambient atmosphere. Attaining both high mobility and good optical figures of merit, a detectivity of ∼1016Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All of these important properties are superior to most advanced inorganic semiconductor phototransistors, indicating a promising future in optoelectronic applications.

Original languageEnglish
Pages (from-to)9020-9026
Number of pages7
JournalNano Letters
Issue number22
Publication statusPublished - 23 Nov 2022


  • bandlike transport
  • halide perovskite
  • mobility
  • photodetector
  • quantum dots
  • thin film transistor


Dive into the research topics of 'Bandlike Transport in FaPbBr3Quantum Dot Phototransistor with High Hole Mobility and Ultrahigh Photodetectivity'. Together they form a unique fingerprint.

Cite this