An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

C. A. A. Ghumman; A. M. C. Moutinho; A. Santos; O. M. N. D. Teodoro; A. Tolstogouzov

doi:10.1016/j.apsusc.2011.10.079

An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

C. A. A. Ghumman, A. M. C. Moutinho, A. Santos, O. M. N. D. Teodoro, A. Tolstogouzov

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Abstract

A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga ⁺ bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P ^- emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

Original language	English
Pages (from-to)	2490-2497
Number of pages	8
Journal	Applied Surface Science
Volume	258
Issue number	7
DOIs	https://doi.org/10.1016/j.apsusc.2011.10.079
Publication status	Published - 15 Jan 2012

Keywords

Electronegativity
III-V semiconductors
Neutral cesium deposition
Secondary ion yield enhancement
TOF-SIMS
Work function

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An upgraded TOF-SIMS VG Ionex IX23LS study on the negative secondary ionAccepted author manuscript, 2.16 MBLicence: CC BY-NC-ND

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@article{00135f846a844845ad6aa27742b01d7c,

title = "An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition",

abstract = "A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.",

keywords = "Electronegativity, III-V semiconductors, Neutral cesium deposition, Secondary ion yield enhancement, TOF-SIMS, Work function",

author = "Ghumman, {C. A. A.} and Moutinho, {A. M. C.} and A. Santos and Teodoro, {O. M. N. D.} and A. Tolstogouzov",

note = "info:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBD%2F44558%2F2008/PT# C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Funda{\c c}{\~a}o para a Ci{\^e}ncia e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.",

year = "2012",

month = jan,

day = "15",

doi = "10.1016/j.apsusc.2011.10.079",

language = "English",

volume = "258",

pages = "2490--2497",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "North-Holland | Elsevier",

number = "7",

}

TY - JOUR

T1 - An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

AU - Ghumman, C. A. A.

AU - Moutinho, A. M. C.

AU - Santos, A.

AU - Teodoro, O. M. N. D.

AU - Tolstogouzov, A.

N1 - info:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBD%2F44558%2F2008/PT# C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.

PY - 2012/1/15

Y1 - 2012/1/15

N2 - A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

AB - A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

KW - Electronegativity

KW - III-V semiconductors

KW - Neutral cesium deposition

KW - Secondary ion yield enhancement

KW - TOF-SIMS

KW - Work function

UR - http://www.scopus.com/inward/record.url?scp=84855541822&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2011.10.079

DO - 10.1016/j.apsusc.2011.10.079

M3 - Article

AN - SCOPUS:84855541822

SN - 0169-4332

VL - 258

SP - 2490

EP - 2497

JO - Applied Surface Science

JF - Applied Surface Science

IS - 7

ER -

An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

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