An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

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Abstract

A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

Original languageEnglish
Pages (from-to)2490-2497
Number of pages8
JournalApplied Surface Science
Volume258
Issue number7
DOIs
Publication statusPublished - 15 Jan 2012

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Cesium
Secondary ion mass spectrometry
Electronegativity
Ions
Secondary emission
Dispensers
Ionization
Data acquisition
Negative ions
Control systems
Atoms
III-V semiconductors
ionex

Keywords

  • Electronegativity
  • III-V semiconductors
  • Neutral cesium deposition
  • Secondary ion yield enhancement
  • TOF-SIMS
  • Work function

Cite this

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title = "An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition",
abstract = "A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.",
keywords = "Electronegativity, III-V semiconductors, Neutral cesium deposition, Secondary ion yield enhancement, TOF-SIMS, Work function",
author = "Ghumman, {C. A. A.} and Moutinho, {A. M. C.} and A. Santos and Teodoro, {O. M. N. D.} and A. Tolstogouzov",
note = "info:eu-repo/grantAgreement/FCT/SFRH/SFRH{\%}2FBD{\%}2F44558{\%}2F2008/PT# C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Funda{\cc}{\~a}o para a Ci{\^e}ncia e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.",
year = "2012",
month = "1",
day = "15",
doi = "10.1016/j.apsusc.2011.10.079",
language = "English",
volume = "258",
pages = "2490--2497",
journal = "Applied Surface Science",
issn = "0169-4332",
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TY - JOUR

T1 - An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

AU - Ghumman, C. A. A.

AU - Moutinho, A. M. C.

AU - Santos, A.

AU - Teodoro, O. M. N. D.

AU - Tolstogouzov, A.

N1 - info:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBD%2F44558%2F2008/PT# C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.

PY - 2012/1/15

Y1 - 2012/1/15

N2 - A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

AB - A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

KW - Electronegativity

KW - III-V semiconductors

KW - Neutral cesium deposition

KW - Secondary ion yield enhancement

KW - TOF-SIMS

KW - Work function

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