Amorphous silicon sensors: From photo to chemical detection

Elvira Fortunato, Alexander Malik, Ana Sêco, Isabel Ferreira, Rodrigo Martins

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper reports the performances of metal/insulator/semiconductor devices, simultaneously sensitive to hydrogen and to the visible region of the spectrum. The sensors used in this work are based on glass/Cr/a-SiH(n+)/a-Si:H(i)/SiOx/Pd structures, where the amorphous silicon was deposited by conventional r.f. techniques and the oxide grown thermally (in air) or chemically (in hydrogen peroxide). The proposed sensors present a response of ∼ 3 orders of magnitude change in the saturation current when in the presence of 400 ppm of hydrogen and an open circuit voltage that decreases in the presence of hydrogen, with a maximum spectral response at 500 nm. These sensors were also compared with equivalent crystalline silicon devices whose oxides were prepared exactly in the same conditions as the ones used for the a-Si:H devices.

Original languageEnglish
Pages (from-to)1349-1353
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
Publication statusPublished - May 1998

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