Abstract

This work deals with the study of the role of the film thickness and composition on the color selectivity of the collecting spectrum of glass/ZnO:Ga/p-a-Si1-xCx:H/ a-Si1-xCx:H /a-Si:H/n-a-Si:H/Al photoelectronic detectors produced in a single chamber plasma enhanced chemical vapor deposition (PECVD) system. The cross contaminations were minimized by a rotate-cover substrate holder system. The devices can detect the blue illumination at small reverse bias and detect red illumination at large reverse bias. The role of the process parameters, especially the thickness of the p-type and intrinsic a-Si1-xCx:H, and the intrinsic a-Si:H layers on the device performances were studied in detail aiming to achieve a better detectivity.
Original languageUnknown
Title of host publicationMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Pages679-683
Volume862
DOIs
Publication statusPublished - 1 Jan 2005
EventSymposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting -
Duration: 1 Jan 2005 → …

Conference

ConferenceSymposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting
Period1/01/05 → …

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