Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

Engineering & Materials Science

• Amorphous silicon 100%
• Electric potential 37%
• Oxides 62%
• Semiconductor materials 64%
• Sputtering 93%
• Temperature 29%
• Thin film transistors 93%
• Threshold voltage 80%

Chemistry

• Ambient Reaction Temperature 20%
• Amorphous Material 50%
• Amorphous Silicon 49%
• Compound Mobility 55%
• Oxide 19%
• Polycrystalline Solid 32%
• Semiconductor 27%
• Sputtering 39%
• Voltage 53%

Physics & Astronomy

• amorphous silicon 33%
• augmentation 22%
• electric potential 19%
• oxides 22%
• performance 16%
• room temperature 20%
• saturation 51%
• sputtering 28%
• thin films 18%
• threshold voltage 34%
• transistors 29%