Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

Elvira Maria Correia Fortunato; Pedro Miguel Cândido Barquinha; Ana Cláudia Madeira Botas Gomes Pimentel; Luis Miguel Nunes Pereira; Gonçalo Gonçalves; Rodrigo Ferrão de Paiva Martins

doi:10.1002/pssr.200600049

Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

Elvira Maria Correia Fortunato, Pedro Miguel Cândido Barquinha, Ana Cláudia Madeira Botas Gomes Pimentel, Luis Miguel Nunes Pereira, Gonçalo Gonçalves, Rodrigo Ferrão de Paiva Martins

Research output: Contribution to journal › Article › peer-review

194 Citations (Scopus)

Abstract

In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.

Original language	English
Pages (from-to)	R34-R36
Number of pages	3
Journal	Physica Status Solidi-Rapid Research Letters
Volume	1
Issue number	1
DOIs	https://doi.org/10.1002/pssr.200600049
Publication status	Published - Jan 2007

Keywords

Amorphous materials
Gates (transistor)
Polycrystalline materials
Reactive sputtering
Thin film transistors
Threshold voltage
Amorphous binary layer
Polycrystalline semiconductors
Saturation mobilities
Semiconducting indium compounds

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10.1002/pssr.200600049

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title = "Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs",

abstract = "In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors. ",

keywords = "Amorphous materials, Gates (transistor), Polycrystalline materials, Reactive sputtering, Thin film transistors, Threshold voltage, Amorphous binary layer, Polycrystalline semiconductors, Saturation mobilities, Semiconducting indium compounds",

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year = "2007",

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doi = "10.1002/pssr.200600049",

language = "English",

volume = "1",

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AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

AU - Pimentel, Ana Cláudia Madeira Botas Gomes

AU - Pereira, Luis Miguel Nunes

AU - Gonçalves, Gonçalo

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2007/1

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N2 - In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.

AB - In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.

KW - Amorphous materials

KW - Gates (transistor)

KW - Polycrystalline materials

KW - Reactive sputtering

KW - Thin film transistors

KW - Threshold voltage

KW - Amorphous binary layer

KW - Polycrystalline semiconductors

KW - Saturation mobilities

KW - Semiconducting indium compounds

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DO - 10.1002/pssr.200600049

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JO - Physica Status Solidi-Rapid Research Letters

JF - Physica Status Solidi-Rapid Research Letters

IS - 1

ER -

Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

Abstract

Keywords

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