Abstract

In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.
Original languageEnglish
Pages (from-to)R34-R36
Number of pages3
JournalPhysica Status Solidi-Rapid Research Letters
Volume1
Issue number1
DOIs
Publication statusPublished - Jan 2007

Fingerprint

Thin film transistors
Amorphous silicon
Threshold voltage
Oxides
Sputtering
Semiconductor materials
saturation
Electric potential
threshold voltage
amorphous silicon
transistors
sputtering
Temperature
oxides
augmentation
electric potential
room temperature
thin films

Keywords

  • Amorphous materials
  • Gates (transistor)
  • Polycrystalline materials
  • Reactive sputtering
  • Thin film transistors
  • Threshold voltage
  • Amorphous binary layer
  • Polycrystalline semiconductors
  • Saturation mobilities
  • Semiconducting indium compounds

Cite this

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title = "Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs",
abstract = "In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.",
keywords = "Amorphous materials, Gates (transistor), Polycrystalline materials, Reactive sputtering, Thin film transistors, Threshold voltage, Amorphous binary layer, Polycrystalline semiconductors, Saturation mobilities, Semiconducting indium compounds",
author = "Fortunato, {Elvira Maria Correia} and Barquinha, {Pedro Miguel C{\^a}ndido} and Pimentel, {Ana Cl{\'a}udia Madeira Botas Gomes} and Pereira, {Luis Miguel Nunes} and Gon{\cc}alo Gon{\cc}alves and Martins, {Rodrigo Ferr{\~a}o de Paiva}",
year = "2007",
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language = "English",
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T1 - Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

AU - Pimentel, Ana Cláudia Madeira Botas Gomes

AU - Pereira, Luis Miguel Nunes

AU - Gonçalves, Gonçalo

AU - Martins, Rodrigo Ferrão de Paiva

PY - 2007/1

Y1 - 2007/1

N2 - In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.

AB - In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.

KW - Amorphous materials

KW - Gates (transistor)

KW - Polycrystalline materials

KW - Reactive sputtering

KW - Thin film transistors

KW - Threshold voltage

KW - Amorphous binary layer

KW - Polycrystalline semiconductors

KW - Saturation mobilities

KW - Semiconducting indium compounds

U2 - 10.1002/pssr.200600049

DO - 10.1002/pssr.200600049

M3 - Article

VL - 1

SP - R34-R36

JO - Physica Status Solidi-Rapid Research Letters

JF - Physica Status Solidi-Rapid Research Letters

SN - 1862-6254

IS - 1

ER -