Abstract

In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors.
Original languageEnglish
Pages (from-to)R34-R36
Number of pages3
JournalPhysica Status Solidi-Rapid Research Letters
Volume1
Issue number1
DOIs
Publication statusPublished - Jan 2007

Keywords

  • Amorphous materials
  • Gates (transistor)
  • Polycrystalline materials
  • Reactive sputtering
  • Thin film transistors
  • Threshold voltage
  • Amorphous binary layer
  • Polycrystalline semiconductors
  • Saturation mobilities
  • Semiconducting indium compounds

Fingerprint Dive into the research topics of 'Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs'. Together they form a unique fingerprint.

  • Cite this