TY - JOUR
T1 - Amorphous carbon thin films
T2 - Mechanisms of hydrogen incorporation during magnetron sputtering and consequences for the secondary electron emission
AU - Adame, C. F.
AU - Alves, E.
AU - Barradas, N. P.
AU - Costa Pinto, P.
AU - Delaup, Y.
AU - Ferreira, I. M. M.
AU - Neupert, H.
AU - Himmerlich, M.
AU - Pfeiffer, S.
AU - Rimoldi, M.
AU - Taborelli, M.
AU - Teodoro, O. M. N. D.
AU - Bundaleski, N.
N1 - Funding Information:
info:eu-repo/grantAgreement/FCT/3599-PPCDT/CERN%2FFIS-TEC%2F0039%2F2019/PT#
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDB%2F00068%2F2020/PT#
info:eu-repo/grantAgreement/FCT/6817 - DCRRNI ID/UIDP%2F00068%2F2020/PT#
Publisher Copyright:
© 2023 Author(s).
PY - 2023/7
Y1 - 2023/7
N2 - Amorphous carbon (a-C) films, having low secondary electron yield (SEY), are used at CERN to suppress electron multipacting in the beam pipes of particle accelerators. It was already demonstrated that hydrogen impurities increase the SEY of a-C films. In this work, a systematic characterization of a set of a-C coatings, deliberately contaminated by deuterium during the magnetron sputtering deposition, by scanning electron microscopy, ion beam analysis, secondary ion mass spectrometry, and optical absorption spectroscopy was performed to establish a correlation between the hydrogen content and the secondary electron emission properties. In parallel, the mechanisms of contamination were also investigated. Adding deuterium allows resolving the contributions of intentional and natural contamination. The results enabled us to quantify the relative deuterium/hydrogen (D/H) amounts and relate them with the maximum SEY (SEYmax). The first step of incorporation appears to be formation of D/H atoms in the discharge. An increase in both the flux of deposited carbon atoms and the discharge current with a D2 fraction in the gas discharge can be explained by target poisoning with deuterium species followed by etching of CxDy clusters, mainly by physical sputtering. For overall relative D/H amounts between 11% and 47% in the discharge gas, the SEYmax increases almost linearly from 0.99 to 1.38. An abrupt growth of SEYmax from 1.38 to 2.12 takes place in the narrow range of D/H relative content of 47%-54%, for which the nature of the deposited films changes to a polymer-like layer.
AB - Amorphous carbon (a-C) films, having low secondary electron yield (SEY), are used at CERN to suppress electron multipacting in the beam pipes of particle accelerators. It was already demonstrated that hydrogen impurities increase the SEY of a-C films. In this work, a systematic characterization of a set of a-C coatings, deliberately contaminated by deuterium during the magnetron sputtering deposition, by scanning electron microscopy, ion beam analysis, secondary ion mass spectrometry, and optical absorption spectroscopy was performed to establish a correlation between the hydrogen content and the secondary electron emission properties. In parallel, the mechanisms of contamination were also investigated. Adding deuterium allows resolving the contributions of intentional and natural contamination. The results enabled us to quantify the relative deuterium/hydrogen (D/H) amounts and relate them with the maximum SEY (SEYmax). The first step of incorporation appears to be formation of D/H atoms in the discharge. An increase in both the flux of deposited carbon atoms and the discharge current with a D2 fraction in the gas discharge can be explained by target poisoning with deuterium species followed by etching of CxDy clusters, mainly by physical sputtering. For overall relative D/H amounts between 11% and 47% in the discharge gas, the SEYmax increases almost linearly from 0.99 to 1.38. An abrupt growth of SEYmax from 1.38 to 2.12 takes place in the narrow range of D/H relative content of 47%-54%, for which the nature of the deposited films changes to a polymer-like layer.
UR - http://www.scopus.com/inward/record.url?scp=85163747241&partnerID=8YFLogxK
U2 - 10.1116/6.0002759
DO - 10.1116/6.0002759
M3 - Article
AN - SCOPUS:85163747241
SN - 0734-2101
VL - 41
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 4
M1 - 043412
ER -