Amorphous and microcrystalline silicon p-i-n optical speed sensors based on the flying spot technique

M. Vieira; A. Fantoni; S. Koynov; J. Cruz; A. Maçarico; R. Martins

doi:10.1016/0022-3093(96)00111-1

Amorphous and microcrystalline silicon p-i-n optical speed sensors based on the flying spot technique

M. Vieira, A. Fantoni, S. Koynov, J. Cruz, A. Maçarico, R. Martins

UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias

Research output: Contribution to journal › Conference article › peer-review

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Abstract

From the flying spot technique (FST) the ambipolar diffusion length and the effective-lifetime of the carriers photogenerated by a moving light spot that strikes a p-i-n junction can be inferred. In this paper, those properties of a p-i-n junction are used together with an optical triangulation principle to determine the velocity of an object that is moving in the direction of a light source. The light reflected back from the object is analysed through an amorphous or a microcrystalline p-i-n structure. Its transient transverse photovoltage is dependent on the velocity of the object. A comparison between the performances of both kinds of devices is presented.

Original language	English
Pages (from-to)	1193-1197
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(96)00111-1
Publication status	Published - 1 Jan 1996
Event	16th International Conference on Amorphous Semiconductors - Science and Technology (ICAS 16) - Kobe, Japan Duration: 4 Sept 1995 → 8 Sept 1995

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@article{7c1d451fb2764b3bb895ee59731bc8bf,

title = "Amorphous and microcrystalline silicon p-i-n optical speed sensors based on the flying spot technique",

abstract = "From the flying spot technique (FST) the ambipolar diffusion length and the effective-lifetime of the carriers photogenerated by a moving light spot that strikes a p-i-n junction can be inferred. In this paper, those properties of a p-i-n junction are used together with an optical triangulation principle to determine the velocity of an object that is moving in the direction of a light source. The light reflected back from the object is analysed through an amorphous or a microcrystalline p-i-n structure. Its transient transverse photovoltage is dependent on the velocity of the object. A comparison between the performances of both kinds of devices is presented.",

author = "M. Vieira and A. Fantoni and S. Koynov and J. Cruz and A. Ma{\c c}arico and R. Martins",

year = "1996",

month = jan,

day = "1",

doi = "10.1016/0022-3093(96)00111-1",

language = "English",

volume = "198-200",

pages = "1193--1197",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "PART 2",

note = "16th International Conference on Amorphous Semiconductors - Science and Technology (ICAS 16) ; Conference date: 04-09-1995 Through 08-09-1995",

}

TY - JOUR

T1 - Amorphous and microcrystalline silicon p-i-n optical speed sensors based on the flying spot technique

AU - Vieira, M.

AU - Fantoni, A.

AU - Koynov, S.

AU - Cruz, J.

AU - Maçarico, A.

AU - Martins, R.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - From the flying spot technique (FST) the ambipolar diffusion length and the effective-lifetime of the carriers photogenerated by a moving light spot that strikes a p-i-n junction can be inferred. In this paper, those properties of a p-i-n junction are used together with an optical triangulation principle to determine the velocity of an object that is moving in the direction of a light source. The light reflected back from the object is analysed through an amorphous or a microcrystalline p-i-n structure. Its transient transverse photovoltage is dependent on the velocity of the object. A comparison between the performances of both kinds of devices is presented.

AB - From the flying spot technique (FST) the ambipolar diffusion length and the effective-lifetime of the carriers photogenerated by a moving light spot that strikes a p-i-n junction can be inferred. In this paper, those properties of a p-i-n junction are used together with an optical triangulation principle to determine the velocity of an object that is moving in the direction of a light source. The light reflected back from the object is analysed through an amorphous or a microcrystalline p-i-n structure. Its transient transverse photovoltage is dependent on the velocity of the object. A comparison between the performances of both kinds of devices is presented.

UR - http://www.scopus.com/inward/record.url?scp=0030563421&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(96)00111-1

DO - 10.1016/0022-3093(96)00111-1

M3 - Conference article

AN - SCOPUS:0030563421

SN - 0022-3093

VL - 198-200

SP - 1193

EP - 1197

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

T2 - 16th International Conference on Amorphous Semiconductors - Science and Technology (ICAS 16)

Y2 - 4 September 1995 through 8 September 1995

ER -

Amorphous and microcrystalline silicon p-i-n optical speed sensors based on the flying spot technique

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