Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application

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Abstract

This work reports the production of ceramic targets based on nanostructured Al-doped ZnO (AZO) powders for sputtering applications. Thenanostructured powder is obtained by a new patented process based on the detonation of an emulsion containing both Zn and Al metal precursorsin the final proportion of 98:2 wt% (ZnO:Al2O3), through which the Al contains is highly uniform distributed over ZnO. Due to the nanostructuredpowder characteristics, the targets can be sintered at substantially lower temperatures (1150-1250 ◦C) by conventional sintering, contributing toproduction costs reduction of ceramic targets and consequently the costs of photovoltaic and displays industries. Electrical resistivity values around3.0-7.0 × 10-3 cm have been obtained depending on final microstructure of the targets. The electro-optical properties of the films produced atroom temperature with thicknesses around 360 nm, besides being highly uniform exhibit a resistivity of about 1 × 10-3 cm and a transmittancein the visible range above 90%.
Original languageEnglish
Pages (from-to)4381-4391
Number of pages11
JournalJournal of the European Ceramic Society
Volume32
Issue number16
DOIs
Publication statusPublished - Dec 2012

Keywords

  • Aluminum doped zinc oxide (AZO)
  • Electrical conductivity
  • Films
  • Final microstructure
  • Sintering

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