TY - JOUR
T1 - Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application
AU - Neves, Nuno
AU - Barros, Raquel
AU - Antunes, Elsa
AU - Calado, João
AU - Fortunato, Elvira Maria Correia
AU - Martins, Rodrigo Ferrão de Paiva
AU - Ferreira, Isabel
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PY - 2012/12
Y1 - 2012/12
N2 - This work reports the production of ceramic targets based on nanostructured Al-doped ZnO (AZO) powders for sputtering applications. Thenanostructured powder is obtained by a new patented process based on the detonation of an emulsion containing both Zn and Al metal precursorsin the final proportion of 98:2 wt% (ZnO:Al2O3), through which the Al contains is highly uniform distributed over ZnO. Due to the nanostructuredpowder characteristics, the targets can be sintered at substantially lower temperatures (1150-1250 ◦C) by conventional sintering, contributing toproduction costs reduction of ceramic targets and consequently the costs of photovoltaic and displays industries. Electrical resistivity values around3.0-7.0 × 10-3 cm have been obtained depending on final microstructure of the targets. The electro-optical properties of the films produced atroom temperature with thicknesses around 360 nm, besides being highly uniform exhibit a resistivity of about 1 × 10-3 cm and a transmittancein the visible range above 90%.
AB - This work reports the production of ceramic targets based on nanostructured Al-doped ZnO (AZO) powders for sputtering applications. Thenanostructured powder is obtained by a new patented process based on the detonation of an emulsion containing both Zn and Al metal precursorsin the final proportion of 98:2 wt% (ZnO:Al2O3), through which the Al contains is highly uniform distributed over ZnO. Due to the nanostructuredpowder characteristics, the targets can be sintered at substantially lower temperatures (1150-1250 ◦C) by conventional sintering, contributing toproduction costs reduction of ceramic targets and consequently the costs of photovoltaic and displays industries. Electrical resistivity values around3.0-7.0 × 10-3 cm have been obtained depending on final microstructure of the targets. The electro-optical properties of the films produced atroom temperature with thicknesses around 360 nm, besides being highly uniform exhibit a resistivity of about 1 × 10-3 cm and a transmittancein the visible range above 90%.
KW - Sintering
KW - Final microstructure
KW - Films
KW - Aluminum doped zinc oxide (AZO)
KW - Electrical conductivity
KW - Aluminum doped zinc oxide (AZO)
KW - Electrical conductivity
KW - Films
KW - Final microstructure
KW - Sintering
UR - http://www.scopus.com/record/display.uri?eid=2-s2.0-84866839575&origin=resultslist&sort=plf-f&src=s&st1
U2 - 10.1016/j.jeurceramsoc.2012.08.007
DO - 10.1016/j.jeurceramsoc.2012.08.007
M3 - Article
SN - 0955-2219
VL - 32
SP - 4381
EP - 4391
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
IS - 16
ER -