Advanced materials for the next generation of thin film transistors

Elvira Maria Correia Fortunato; Pedro Miguel Cândido Barquinha; Rodrigo Ferrão de Paiva Martins; Luis Miguel Nunes Pereira

Advanced materials for the next generation of thin film transistors

Elvira Maria Correia Fortunato, Pedro Miguel Cândido Barquinha, Rodrigo Ferrão de Paiva Martins, Luis Miguel Nunes Pereira

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf magnetron sputtering at room temperature, using amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications.

Original language	Unknown
Title of host publication	Idmc'07: Proceedings of the International Display Manufacturing Conference 2007
Editors	CH Chen, YS Tsai
Pages	371-373
Publication status	Published - 1 Jan 2007
Event	7th International Display Manufacturing Conference (IDMC 07) - Duration: 1 Jan 2007 → …

Conference

Conference	7th International Display Manufacturing Conference (IDMC 07)
Period	1/01/07 → …

Cite this

@inproceedings{cfcb60b2b3ef4222800aca45189e1fb7,

title = "Advanced materials for the next generation of thin film transistors",

abstract = "Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf magnetron sputtering at room temperature, using amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications.",

author = "Fortunato, {Elvira Maria Correia} and Barquinha, {Pedro Miguel C{\^a}ndido} and Martins, {Rodrigo Ferr{\~a}o de Paiva} and Pereira, {Luis Miguel Nunes}",

year = "2007",

month = jan,

day = "1",

language = "Unknown",

pages = "371--373",

editor = "CH Chen and YS Tsai",

booktitle = "Idmc'07: Proceedings of the International Display Manufacturing Conference 2007",

note = "7th International Display Manufacturing Conference (IDMC 07) ; Conference date: 01-01-2007",

}

Advanced materials for the next generation of thin film transistors. / Fortunato, Elvira Maria Correia ; Barquinha, Pedro Miguel Cândido ; Martins, Rodrigo Ferrão de Paiva et al.
Idmc'07: Proceedings of the International Display Manufacturing Conference 2007. ed. / CH Chen; YS Tsai. 2007. p. 371-373.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Advanced materials for the next generation of thin film transistors

AU - Fortunato, Elvira Maria Correia

AU - Barquinha, Pedro Miguel Cândido

AU - Martins, Rodrigo Ferrão de Paiva

AU - Pereira, Luis Miguel Nunes

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf magnetron sputtering at room temperature, using amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications.

AB - Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf magnetron sputtering at room temperature, using amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications.

M3 - Conference contribution

SP - 371

EP - 373

BT - Idmc'07: Proceedings of the International Display Manufacturing Conference 2007

A2 - Chen, CH

A2 - Tsai, YS

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