TY - JOUR
T1 - A water-induced high-k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors
AU - Liu, Ao
AU - Liu, Guoxia
AU - Zhu, Huihui
AU - Meng, You
AU - Song, Huijun
AU - Shin, Byoungchul
AU - Fortunato, Elvira
AU - Martins, Rodrigo
AU - Shan, Fukai
N1 - This study was supported by Natural Science Foundation of China (Grant No. 51472130) and Natural Science Foundation of Shandong Province (Grant No. ZR2012FM020).
PY - 2015/9/1
Y1 - 2015/9/1
N2 - In this work, we develop a simple and eco-friendly water-inducement method for high-k yttrium oxide (YOx) dielectric. To prepare YOx thin films at low temperature, yttrium nitrate and deionized water were used as the source materials. No toxic organic materials were required in the YOx coating process. The YOx thin film annealed at 350 °C showed a low leakage current density of 2 × 10-9 A/cm2 at 5 MV/cm and a large areal-capacitance of 448 nF/cm2 at 1 kHz. On the basis of its implementation as the gate dielectric, the fully-water-induced In2O3 TFT based on YOx exhibited a high field-effect mobility of 15.98 cm2/Vs, excellent subthreshold swing of 75 mV/dec, an on/off current ratio of 6 × 106, and a negligible hysteresis of 50 mV. The as-fabricated TFT operated at a low voltage (∼1.5 V) and showed high drain current drive capability, enabling oxide TFT with a water-induced high-k dielectric for use in backplane electronics for low-power mobile display applications.
AB - In this work, we develop a simple and eco-friendly water-inducement method for high-k yttrium oxide (YOx) dielectric. To prepare YOx thin films at low temperature, yttrium nitrate and deionized water were used as the source materials. No toxic organic materials were required in the YOx coating process. The YOx thin film annealed at 350 °C showed a low leakage current density of 2 × 10-9 A/cm2 at 5 MV/cm and a large areal-capacitance of 448 nF/cm2 at 1 kHz. On the basis of its implementation as the gate dielectric, the fully-water-induced In2O3 TFT based on YOx exhibited a high field-effect mobility of 15.98 cm2/Vs, excellent subthreshold swing of 75 mV/dec, an on/off current ratio of 6 × 106, and a negligible hysteresis of 50 mV. The as-fabricated TFT operated at a low voltage (∼1.5 V) and showed high drain current drive capability, enabling oxide TFT with a water-induced high-k dielectric for use in backplane electronics for low-power mobile display applications.
KW - High-k YO<inf>x</inf> dielectric
KW - Thin-film transistor
KW - Water-inducement method
UR - http://www.scopus.com/inward/record.url?scp=84942369470&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2015.04.015
DO - 10.1016/j.cap.2015.04.015
M3 - Article
VL - 15
SP - S75-S81
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - Suppl.2(SI)
ER -