A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors

Tejaswini Keragodu; Bhawna Tiwari; Nishtha; Pydi Bahubalindruni; Joao Goes; Pedro Barquinha

doi:10.1109/ISCAS.2018.8351175

A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors

Tejaswini Keragodu, Bhawna Tiwari, Nishtha, Pydi Bahubalindruni, Joao Goes, Pedro Barquinha

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Citations (Scopus)

100 Downloads (Pure)

Abstract

This paper presents a voltage controlled oscillator (VCO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). This circuit consists of a high-gain OpAmp, a comparator and a relaxation oscillator. The implemented relaxation oscillator shows a power consumption of 700 μW, when it is simulated with a supply rail of ±5 V. It shows a frequency of oscillation range from 327 to 560 Hz, when the tuning capacitance value varies from 1.6 to 5 pF. On the other hand, the VCO has a power dissipation of 1.3 mW with frequency ranging from 400 to 556 Hz with a controlling voltage from -5 to 5 V. In-house oxide TFT model is used for circuit simulations in Cadence environment. This circuit finds potential applications in large-area flexible systems, namely smart packaging, biomedical and wearable systems, which needs clocks with different frequencies.

Original language	English
Title of host publication	2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Volume	2018-May
ISBN (Electronic)	978-1-5386-4881-0
DOIs	https://doi.org/10.1109/ISCAS.2018.8351175
Publication status	Published - 26 Apr 2018
Event	2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy Duration: 27 May 2018 → 30 May 2018

Conference

Conference	2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
Country/Territory	Italy
City	Florence
Period	27/05/18 → 30/05/18

Keywords

a-IGZO TFTs
comparator with oxide TFTs
positive feedback operational amplifier
Relaxation Oscillator
Voltage Controlled Oscillator

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A Voltage Controlled Oscillator Using IGZO (author proof)Submitted manuscript, 697 KB

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Keragodu, T., Tiwari, B., Nishtha, Bahubalindruni, P., Goes, J., & Barquinha, P. (2018). A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors. In 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings (Vol. 2018-May). Article 8351175 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ISCAS.2018.8351175

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title = "A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors",

abstract = "This paper presents a voltage controlled oscillator (VCO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). This circuit consists of a high-gain OpAmp, a comparator and a relaxation oscillator. The implemented relaxation oscillator shows a power consumption of 700 μW, when it is simulated with a supply rail of ±5 V. It shows a frequency of oscillation range from 327 to 560 Hz, when the tuning capacitance value varies from 1.6 to 5 pF. On the other hand, the VCO has a power dissipation of 1.3 mW with frequency ranging from 400 to 556 Hz with a controlling voltage from -5 to 5 V. In-house oxide TFT model is used for circuit simulations in Cadence environment. This circuit finds potential applications in large-area flexible systems, namely smart packaging, biomedical and wearable systems, which needs clocks with different frequencies.",

keywords = "a-IGZO TFTs, comparator with oxide TFTs, positive feedback operational amplifier, Relaxation Oscillator, Voltage Controlled Oscillator",

author = "Tejaswini Keragodu and Bhawna Tiwari and Nishtha and Pydi Bahubalindruni and Joao Goes and Pedro Barquinha",

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Keragodu, T, Tiwari, B, Nishtha, , Bahubalindruni, P , Goes, J & Barquinha, P 2018, A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors. in 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings. vol. 2018-May, 8351175, Institute of Electrical and Electronics Engineers (IEEE), 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018, Florence, Italy, 27/05/18. https://doi.org/10.1109/ISCAS.2018.8351175

A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors. / Keragodu, Tejaswini; Tiwari, Bhawna; Nishtha et al.
2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings. Vol. 2018-May Institute of Electrical and Electronics Engineers (IEEE), 2018. 8351175.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors

AU - Keragodu, Tejaswini

AU - Tiwari, Bhawna

AU - Nishtha,

AU - Bahubalindruni, Pydi

AU - Goes, Joao

AU - Barquinha, Pedro

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PY - 2018/4/26

Y1 - 2018/4/26

N2 - This paper presents a voltage controlled oscillator (VCO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). This circuit consists of a high-gain OpAmp, a comparator and a relaxation oscillator. The implemented relaxation oscillator shows a power consumption of 700 μW, when it is simulated with a supply rail of ±5 V. It shows a frequency of oscillation range from 327 to 560 Hz, when the tuning capacitance value varies from 1.6 to 5 pF. On the other hand, the VCO has a power dissipation of 1.3 mW with frequency ranging from 400 to 556 Hz with a controlling voltage from -5 to 5 V. In-house oxide TFT model is used for circuit simulations in Cadence environment. This circuit finds potential applications in large-area flexible systems, namely smart packaging, biomedical and wearable systems, which needs clocks with different frequencies.

AB - This paper presents a voltage controlled oscillator (VCO) using amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs). This circuit consists of a high-gain OpAmp, a comparator and a relaxation oscillator. The implemented relaxation oscillator shows a power consumption of 700 μW, when it is simulated with a supply rail of ±5 V. It shows a frequency of oscillation range from 327 to 560 Hz, when the tuning capacitance value varies from 1.6 to 5 pF. On the other hand, the VCO has a power dissipation of 1.3 mW with frequency ranging from 400 to 556 Hz with a controlling voltage from -5 to 5 V. In-house oxide TFT model is used for circuit simulations in Cadence environment. This circuit finds potential applications in large-area flexible systems, namely smart packaging, biomedical and wearable systems, which needs clocks with different frequencies.

KW - a-IGZO TFTs

KW - comparator with oxide TFTs

KW - positive feedback operational amplifier

KW - Relaxation Oscillator

KW - Voltage Controlled Oscillator

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U2 - 10.1109/ISCAS.2018.8351175

DO - 10.1109/ISCAS.2018.8351175

M3 - Conference contribution

AN - SCOPUS:85057133437

VL - 2018-May

BT - 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018

Y2 - 27 May 2018 through 30 May 2018

ER -

A Voltage Controlled Oscillator Using IGZO Thin-Film Transistors

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Keywords

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