A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface

J. M. M. de Nijs; C. Carvalho; M. Santos; R. Martins

doi:10.1016/0169-4332(91)90077-W

A thin SiO layer as a remedy for the indium reduction at the In₂O₃/μc-Si:C:H interface

J. M. M. de Nijs, C. Carvalho, M. Santos, R. Martins

DCM - Departamento de Ciência dos Materiais

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5 Citations (Scopus)

Abstract

The reduction of the In₂O₃ caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In₂O₃/pi junction show that the SiO layer benefits the opto-electrical characteristics.

Original language	English
Pages (from-to)	339-342
Number of pages	4
Journal	Applied Surface Science
Volume	52
Issue number	4
DOIs	https://doi.org/10.1016/0169-4332(91)90077-W
Publication status	Published - 1991

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@article{4faddadf75bb476682d9d2cf0be6a8c7,

title = "A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface",

abstract = "The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 {\AA}) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.",

author = "{de Nijs}, {J. M. M.} and C. Carvalho and M. Santos and R. Martins",

note = "This work is supported by the JOULE pro-grammeo f the Commissiono f European Communities,c ontractN o. JOUR-077.",

year = "1991",

doi = "10.1016/0169-4332(91)90077-W",

language = "English",

volume = "52",

pages = "339--342",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "North-Holland | Elsevier",

number = "4",

}

TY - JOUR

T1 - A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface

AU - de Nijs, J. M. M.

AU - Carvalho, C.

AU - Santos, M.

AU - Martins, R.

N1 - This work is supported by the JOULE pro-grammeo f the Commissiono f European Communities,c ontractN o. JOUR-077.

PY - 1991

Y1 - 1991

N2 - The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

AB - The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0026395801&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(91)90077-W

DO - 10.1016/0169-4332(91)90077-W

M3 - Article

AN - SCOPUS:0026395801

SN - 0169-4332

VL - 52

SP - 339

EP - 342

JO - Applied Surface Science

JF - Applied Surface Science

IS - 4

ER -

A thin SiO layer as a remedy for the indium reduction at the In₂O₃/μc-Si:C:H interface

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