A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface

J. M. M. de Nijs, C. Carvalho, M. Santos, R. Martins

Research output: Contribution to journalArticle

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Abstract

The reduction of the In2O3 caused by the deposition of μc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

Original languageEnglish
Pages (from-to)339-342
Number of pages4
JournalApplied Surface Science
Volume52
Issue number4
DOIs
Publication statusPublished - 1991

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