A temperature-compensated class-AB parametric residue amplifier for SAR-assisted pipeline ADCs

João Goes, Benjamin Tardivel, João de Melo, João Marques

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

A novel temperature compensated class-AB residue amplifier based on MOS parametric amplification to be used in high-speed SAR-assisted pipeline ADCs is presented in this paper. The proposed circuit has been designed in a 28-nm standard CMOS process with a 0.9 V nominal power supply. The simulated class-AB fully-dynamic parametric amplifier has an open-loop nominal gain of 6× V/V, while dissipates 550 μW at 1 GHz. It achieves a gain variation bounded to ±3 % across the junction temperature range of -40 ºC to 125 ºC and it reaches a power-to-conversion-speed ratio better than 5.5 × 10-13 W/Hz representing a factor of about 4 times of energy-efficiency improvement when compared with the state-of-the-art.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)9781728133201
Publication statusPublished - 2020
Event52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Virtual, Online
Duration: 10 Oct 202021 Oct 2020

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2020-October
ISSN (Print)0271-4310

Conference

Conference52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
CityVirtual, Online
Period10/10/2021/10/20

Keywords

  • Analog-to-digital converter (ADC)
  • Class-AB residue amplifier
  • Parametric amplifier
  • Successive-approximation-register (SAR)
  • Temperature compensation

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