A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals

Jorg Haeberle; Simone Brizzi; Diana Gaspar; P. Barquinha; Zbigniew Galazka; Detlev Schulz; Dieter Schmeißer

doi:10.1088/2053-1591/3/10/106302

A spectroscopic comparison of IGZO thin films and the parent In₂O₃, Ga₂O₃, and ZnO single crystals

Jorg Haeberle, Simone Brizzi, Diana Gaspar, P. Barquinha, Zbigniew Galazka, Detlev Schulz, Dieter Schmeißer

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Weuse resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, andO1s absorption edges to report on the electronic properties of indium-gallium-zinc-oxide thin films.Wealso compare the data with the respective data of the corresponding single crystals In₂O₃, Ga₂O₃, and ZnO.Wefocus on the elemental composition and, in particular, find no evidence for oxygen deficiency. The In, Ga, and Zn absorption data at resonance can be used to analyze the conduction band states in detail.We deduce that a configuration interaction between d¹⁰s and d⁹s¹states is of importance. Weprovided a novel mechanism in which configuration interaction induced gap states create both, extended unoccupied states around E_F as well as localized occupied states within the gap.

Original language	English
Article number	106302
Journal	Materials Research Express
Volume	3
Issue number	10
DOIs	https://doi.org/10.1088/2053-1591/3/10/106302
Publication status	Published - 1 Oct 2016

Keywords

In-gap defect states
Resonant photoelectron spectroscopy
Transparent conducting oxides

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10.1088/2053-1591/3/10/106302Licence: CC BY-NC-ND

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title = "A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals",

abstract = "Weuse resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, andO1s absorption edges to report on the electronic properties of indium-gallium-zinc-oxide thin films.Wealso compare the data with the respective data of the corresponding single crystals In2O3, Ga2O3, and ZnO.Wefocus on the elemental composition and, in particular, find no evidence for oxygen deficiency. The In, Ga, and Zn absorption data at resonance can be used to analyze the conduction band states in detail.We deduce that a configuration interaction between d10s and d9s1states is of importance. Weprovided a novel mechanism in which configuration interaction induced gap states create both, extended unoccupied states around EF as well as localized occupied states within the gap.",

keywords = "In-gap defect states, Resonant photoelectron spectroscopy, Transparent conducting oxides",

author = "Jorg Haeberle and Simone Brizzi and Diana Gaspar and P. Barquinha and Zbigniew Galazka and Detlev Schulz and Dieter Schmei{\ss}er",

note = "We like to acknowledge the support of the Bessy staff and the technical assistance of Guido Beuckert. We thank Karsten Henkel for a critical reading of the manuscript. This work is supported by Deutsche ForschungsGemeinschaft (DFG) within the project SCHM 745/31-1.",

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doi = "10.1088/2053-1591/3/10/106302",

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T1 - A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals

AU - Haeberle, Jorg

AU - Brizzi, Simone

AU - Gaspar, Diana

AU - Barquinha, P.

AU - Galazka, Zbigniew

AU - Schulz, Detlev

AU - Schmeißer, Dieter

N1 - We like to acknowledge the support of the Bessy staff and the technical assistance of Guido Beuckert. We thank Karsten Henkel for a critical reading of the manuscript. This work is supported by Deutsche ForschungsGemeinschaft (DFG) within the project SCHM 745/31-1.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Weuse resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, andO1s absorption edges to report on the electronic properties of indium-gallium-zinc-oxide thin films.Wealso compare the data with the respective data of the corresponding single crystals In2O3, Ga2O3, and ZnO.Wefocus on the elemental composition and, in particular, find no evidence for oxygen deficiency. The In, Ga, and Zn absorption data at resonance can be used to analyze the conduction band states in detail.We deduce that a configuration interaction between d10s and d9s1states is of importance. Weprovided a novel mechanism in which configuration interaction induced gap states create both, extended unoccupied states around EF as well as localized occupied states within the gap.

AB - Weuse resonant photoelectron spectroscopy at the Zn 2p, Ga 2p, In 3d, andO1s absorption edges to report on the electronic properties of indium-gallium-zinc-oxide thin films.Wealso compare the data with the respective data of the corresponding single crystals In2O3, Ga2O3, and ZnO.Wefocus on the elemental composition and, in particular, find no evidence for oxygen deficiency. The In, Ga, and Zn absorption data at resonance can be used to analyze the conduction band states in detail.We deduce that a configuration interaction between d10s and d9s1states is of importance. Weprovided a novel mechanism in which configuration interaction induced gap states create both, extended unoccupied states around EF as well as localized occupied states within the gap.

KW - In-gap defect states

KW - Resonant photoelectron spectroscopy

KW - Transparent conducting oxides

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SN - 2053-1591

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A spectroscopic comparison of IGZO thin films and the parent In₂O₃, Ga₂O₃, and ZnO single crystals

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Keywords

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