A small-area self-biased wideband CMOS balun LNA with noise cancelling and gain enhancement

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3 Citations (Scopus)

Abstract

In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses self-biasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverter-based circuit, we obtain a ~3 dB enhancement in voltage gain, with improved robustness against PVT variations. Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.
Original languageEnglish
Title of host publication-
Pages1-4
Number of pages4
ISBN (Electronic)978-1-4244-8971-8
DOIs
Publication statusPublished - 1 Jan 2010
EventNORCHIP 2010 -
Duration: 1 Jan 2010 → …

Conference

ConferenceNORCHIP 2010
Period1/01/10 → …

Keywords

  • Self-biased
  • Wideband balun LNA
  • Area
  • CMOS LNAs
  • Inverter based amplifiers
  • Noise canceling

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