A simple submicron MOSFET model and its application to the analytical characterization of analog circuits

Maria Helena Silva Fino

doi:10.1109/ECCTD.2005.1522923

A simple submicron MOSFET model and its application to the analytical characterization of analog circuits

Maria Helena Silva Fino

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper presents a simple submicron MOSFET model, which can be used for handling analogue circuits analytically and predict the circuit behavior both in strong and moderate inversion working conditions. This model is an extension of Sakurai's Npower model, where moderate inversion Mosfet characterization is also accounted for. The model parameters are evaluated by applying a fitting procedure to previously DC simulated Mosfet transistors. To prove further, the model is applied to the DC and AC characterization of an active load differential amplifier. Results obtained for 1.2V SMIC018 technology show 2-3% average error, compared to simulations with Hspice.

Original language	English
Pages (from-to)	115-118
Number of pages	4
Journal	PROCEEDINGS OF THE 2005 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN, VOL 1
Volume	NA
Issue number	NA
DOIs	https://doi.org/10.1109/ECCTD.2005.1522923
Publication status	Published - 31 Dec 2005

Keywords

Electric network analysis
Power amplifiers
Computer simulation
DC power transmission
Parameter estimation

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10.1109/ECCTD.2005.1522923

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abstract = "This paper presents a simple submicron MOSFET model, which can be used for handling analogue circuits analytically and predict the circuit behavior both in strong and moderate inversion working conditions. This model is an extension of Sakurai's Npower model, where moderate inversion Mosfet characterization is also accounted for. The model parameters are evaluated by applying a fitting procedure to previously DC simulated Mosfet transistors. To prove further, the model is applied to the DC and AC characterization of an active load differential amplifier. Results obtained for 1.2V SMIC018 technology show 2-3% average error, compared to simulations with Hspice.",

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AU - Fino, Maria Helena Silva

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N2 - This paper presents a simple submicron MOSFET model, which can be used for handling analogue circuits analytically and predict the circuit behavior both in strong and moderate inversion working conditions. This model is an extension of Sakurai's Npower model, where moderate inversion Mosfet characterization is also accounted for. The model parameters are evaluated by applying a fitting procedure to previously DC simulated Mosfet transistors. To prove further, the model is applied to the DC and AC characterization of an active load differential amplifier. Results obtained for 1.2V SMIC018 technology show 2-3% average error, compared to simulations with Hspice.

AB - This paper presents a simple submicron MOSFET model, which can be used for handling analogue circuits analytically and predict the circuit behavior both in strong and moderate inversion working conditions. This model is an extension of Sakurai's Npower model, where moderate inversion Mosfet characterization is also accounted for. The model parameters are evaluated by applying a fitting procedure to previously DC simulated Mosfet transistors. To prove further, the model is applied to the DC and AC characterization of an active load differential amplifier. Results obtained for 1.2V SMIC018 technology show 2-3% average error, compared to simulations with Hspice.

KW - Electric network analysis

KW - Power amplifiers

KW - Computer simulation

KW - DC power transmission

KW - Parameter estimation

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A simple submicron MOSFET model and its application to the analytical characterization of analog circuits

Abstract

Keywords

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