A-Si: H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques

M. Vieira, R. Martins, E. Fortunato, F. Soares, L. Guimarães

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Abstract

On this paper we report the physical model that supports the theory of the Flying Spot Technique (FST). Through this technique it is possible to determine separately the ambipolar diffusion length (L*) and the effective lifetime (τ*) of the generated carriers, using either Schottky diodes or quasi-ohmic sandwich structures. We also report a new static method based on the Spectral Photovoltage (SPT) that allows to infer the ambipolar diffusion length and to estimate the surface recombination velocity.

Original languageEnglish
Pages (from-to)479-482
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
Publication statusPublished - 1991

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