A-Si: H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques

M. Vieira, R. Martins, E. Fortunato, F. Soares, L. Guimarães

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

On this paper we report the physical model that supports the theory of the Flying Spot Technique (FST). Through this technique it is possible to determine separately the ambipolar diffusion length (L*) and the effective lifetime (τ*) of the generated carriers, using either Schottky diodes or quasi-ohmic sandwich structures. We also report a new static method based on the Spectral Photovoltage (SPT) that allows to infer the ambipolar diffusion length and to estimate the surface recombination velocity.

Original languageEnglish
Pages (from-to)479-482
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 1
DOIs
Publication statusPublished - 1991

Fingerprint

Sandwich structures
Diodes

Cite this

@article{a5e560ecf1cb446ea580bcfdb56174ef,
title = "A-Si: H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques",
abstract = "On this paper we report the physical model that supports the theory of the Flying Spot Technique (FST). Through this technique it is possible to determine separately the ambipolar diffusion length (L*) and the effective lifetime (τ*) of the generated carriers, using either Schottky diodes or quasi-ohmic sandwich structures. We also report a new static method based on the Spectral Photovoltage (SPT) that allows to infer the ambipolar diffusion length and to estimate the surface recombination velocity.",
author = "M. Vieira and R. Martins and E. Fortunato and F. Soares and L. Guimar{\~a}es",
year = "1991",
doi = "10.1016/S0022-3093(05)80159-0",
language = "English",
volume = "137-138",
pages = "479--482",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "PART 1",

}

A-Si : H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques. / Vieira, M.; Martins, R.; Fortunato, E.; Soares, F.; Guimarães, L.

In: Journal of Non-Crystalline Solids, Vol. 137-138, No. PART 1, 1991, p. 479-482.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A-Si

T2 - H ambipolar diffusion length and effective lifetime measured by flying spot (FST) and spectral photovoltage (SPT) techniques

AU - Vieira, M.

AU - Martins, R.

AU - Fortunato, E.

AU - Soares, F.

AU - Guimarães, L.

PY - 1991

Y1 - 1991

N2 - On this paper we report the physical model that supports the theory of the Flying Spot Technique (FST). Through this technique it is possible to determine separately the ambipolar diffusion length (L*) and the effective lifetime (τ*) of the generated carriers, using either Schottky diodes or quasi-ohmic sandwich structures. We also report a new static method based on the Spectral Photovoltage (SPT) that allows to infer the ambipolar diffusion length and to estimate the surface recombination velocity.

AB - On this paper we report the physical model that supports the theory of the Flying Spot Technique (FST). Through this technique it is possible to determine separately the ambipolar diffusion length (L*) and the effective lifetime (τ*) of the generated carriers, using either Schottky diodes or quasi-ohmic sandwich structures. We also report a new static method based on the Spectral Photovoltage (SPT) that allows to infer the ambipolar diffusion length and to estimate the surface recombination velocity.

UR - http://www.scopus.com/inward/record.url?scp=0026415491&partnerID=8YFLogxK

U2 - 10.1016/S0022-3093(05)80159-0

DO - 10.1016/S0022-3093(05)80159-0

M3 - Article

VL - 137-138

SP - 479

EP - 482

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - PART 1

ER -