TY - GEN
T1 - A Segmented DAC Using a-IGZO TFTs for Memristor Based Neural Network Accelerators
AU - Das, Sagar
AU - Shrivastava, Suyash
AU - Bahubalindruni, Pydi Ganga
AU - Kiazadeh, Asal
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - This paper presents a pulse amplitude modulated signal generator to address inference in Memristor based Neural Network Accelerators. As a part of this system, a novel 8-bit capacitive segmented Digital to Analog Converter (DAC) using amorphous Indium Galium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology has been designed. The DAC employs 50% segmentation with binary coded least significant bits (LSBs) and unary coded most significant bits (MSBs). This circuit has shown an ENOB of 7.3 bits at a sampling frequency of 100 kHz and an input frequency of 50 kHz. The worst case INL and DNL were recorded as 0.047 LSB and 0.34 LSB, respectively. With a power supply voltage of 5 V for the operational amplifier and 3V as the DAC reference voltage, the power consumption of the complete DAC was around 1.25 mW. This circuit can find potential applications in different flexible electronics systems.
AB - This paper presents a pulse amplitude modulated signal generator to address inference in Memristor based Neural Network Accelerators. As a part of this system, a novel 8-bit capacitive segmented Digital to Analog Converter (DAC) using amorphous Indium Galium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology has been designed. The DAC employs 50% segmentation with binary coded least significant bits (LSBs) and unary coded most significant bits (MSBs). This circuit has shown an ENOB of 7.3 bits at a sampling frequency of 100 kHz and an input frequency of 50 kHz. The worst case INL and DNL were recorded as 0.047 LSB and 0.34 LSB, respectively. With a power supply voltage of 5 V for the operational amplifier and 3V as the DAC reference voltage, the power consumption of the complete DAC was around 1.25 mW. This circuit can find potential applications in different flexible electronics systems.
KW - DAC
KW - Flexible electronics
KW - Memristors crossbars
KW - Oxide TFTs
UR - http://www.scopus.com/inward/record.url?scp=85174422191&partnerID=8YFLogxK
U2 - 10.1109/IFETC57334.2023.10254933
DO - 10.1109/IFETC57334.2023.10254933
M3 - Conference contribution
AN - SCOPUS:85174422191
T3 - International Flexible Electronics Technology Conference (IFETC)
BT - IFETC 2023 - 5th IEEE International Flexible Electronics Technology Conference
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Massachusetts
T2 - 5th IEEE International Flexible Electronics Technology Conference, IFETC 2023
Y2 - 13 August 2023 through 16 August 2023
ER -