TY - JOUR
T1 - A Robust Fully-Dynamic Residue Amplifier for Two-Stage SAR Assisted Pipeline ADCs
AU - Singh, Shreya
AU - Bahubalindruni, Pydi
AU - Goes, Joao
N1 - Sem PDF conforme despacho.
National Funds through FCT, the Portuguese Foundation for Science and Technology, under the projects DISRUPTIVE (EXCL/EEI-ELC/0261/2012) and Strategic Project, PEST (UID/EEA/00066/2013). This work is partially funded by IIIT Delhi.
PY - 2017
Y1 - 2017
N2 - his paper proposes a robust, 3-stage fully-dynamic high-gain residue amplifier for a 12-bit 80 MS/s two-stage SAR assisted pipeline ADC. Parametric amplification has been used in the proposed open-loop amplifier to enhance gain. Third stage of the circuit is implemented with dynamic source followers (DSFs), which contributed to gain enhancement and also promised a robust performance against different loads and process corners. The circuit has shown a gain of 31 dB, a power consumption of 0.1mW and an operating frequency of approximately 1 GHz from simulations. Circuit corner performance is varying almost within +/- 1 dB in gain and +/- 20% in bandwidth from the nominal. Circuit simulations have been carried out in standard 65 nm CMOS technology with a power supply of 1V.
AB - his paper proposes a robust, 3-stage fully-dynamic high-gain residue amplifier for a 12-bit 80 MS/s two-stage SAR assisted pipeline ADC. Parametric amplification has been used in the proposed open-loop amplifier to enhance gain. Third stage of the circuit is implemented with dynamic source followers (DSFs), which contributed to gain enhancement and also promised a robust performance against different loads and process corners. The circuit has shown a gain of 31 dB, a power consumption of 0.1mW and an operating frequency of approximately 1 GHz from simulations. Circuit corner performance is varying almost within +/- 1 dB in gain and +/- 20% in bandwidth from the nominal. Circuit simulations have been carried out in standard 65 nm CMOS technology with a power supply of 1V.
KW - AMPLIFICATION
KW - Integrated circuit modeling
KW - Power demand
KW - Robustness
KW - Logic gates
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85032663052&origin=resultslist&sort=plf-f&src=s&st1
U2 - 10.1109/ISCAS.2017.8050490
DO - 10.1109/ISCAS.2017.8050490
M3 - Article
SN - 0271-4302
JO - 2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
JF - 2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
M1 - 8050490
ER -