A next generation TCO material for display systems: Molybdenum doped indium oxide thin films

E. Elangovan, A. Marques, R. Martins, E. Fortunato

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40-180 W) and sputtering time (ranging 2.5-20 min). Thickness of the films found varied between 50-400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and deposition time ≤ 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10-3 Ω-cm and a maximum carrier concentration of 4.16 × 1020 cm-3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V-1 s-1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90% (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27% for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters.

Original languageEnglish
Title of host publicationMaterials for Next-Generation Display Systems
Pages1-6
Number of pages6
Volume936
Publication statusPublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 17 Apr 200621 Apr 2006

Conference

Conference2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period17/04/0621/04/06

Fingerprint Dive into the research topics of 'A next generation TCO material for display systems: Molybdenum doped indium oxide thin films'. Together they form a unique fingerprint.

Cite this