“A new weakly absorbing and highly conductive (c-Six:Cy:Oz:H) material produced by a TCDDC system”

Here we report the progress on transport and structural properties presented by n- and p-type doped Ilc-Six :Cy :Oz:H thin films weakly absorbing and highly conductives [(10-3 < cr < 10 (ncm) -1] prepared in a Two Consecutive Oecomposition and Oeposition Chamber (TCOOC) reactor. These films contain Si microcrystals embedded in an a-Six:Cy:Oz:H tissue, where carbon is preferential incorporated as stoichiometric Si:C whilst O is present mainly as suboxide. No evidence for the presence of Si:C crystallites is observed. Absorption coefficient (a.) smaller than c-Si are observed for films containing about 20 at% C and 25 at% O. Conductivity measurements reveal that films are almost non-activated, being the conduction mechanism mainly ruled by tunneling between the grains.PhotothermaJOeflection Spectroscopy (POS) results lead to Urbach energies (Eo) and density of states (Ns) larger than 200 meV and1018 cm-3, respectively, dependent on film composition.