A model for the refractive index of amorphous silico for FDTD simulation of photonics waveguides

A. Fantoni; P. Lourenco; M. Vieira

doi:10.1109/NUSOD.2017.8010044

A model for the refractive index of amorphous silico for FDTD simulation of photonics waveguides

A. Fantoni, P. Lourenco, M. Vieira

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

This paper presents an analysis of the material quality influence for amorphous silicon waveguides for microphotonic applications. Material quality is taken into account by a model based on the absorption coefficient data obtained by Constant Photocurrent Measurement (CPM) in the near infrared region. The GUTL (Gauss-Urbach-Tauc-Lorentz) model has been presented as an extension of the standard Urbach-Tauc-Lorentz model and proposed as a predictor for the wavelength dependent optical constants of amorphous silicon in the near infrared spectra. Values produced for the GUTL model have been used as input for a set of FDTD simulations, taking in consideration different material qualities and waveguide dimensions directed to study the characteristics of amorphous silicon waveguides embedded in a SiO₂ cladding.

Original language	English
Title of host publication	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Publisher	IEEE Computer Society
Pages	167-168
Number of pages	2
ISBN (Electronic)	978-150905323-0
DOIs	https://doi.org/10.1109/NUSOD.2017.8010044
Publication status	Published - 11 Aug 2017
Event	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark Duration: 24 Jul 2017 → 28 Jul 2017

Conference

Conference	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Country/Territory	Denmark
City	Copenhagen
Period	24/07/17 → 28/07/17

Keywords

Amorphous silicon
Optical waveguides
Finite difference methods
Time-domain analysis

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10.1109/NUSOD.2017.8010044

Cite this

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title = "A model for the refractive index of amorphous silico for FDTD simulation of photonics waveguides",

abstract = "This paper presents an analysis of the material quality influence for amorphous silicon waveguides for microphotonic applications. Material quality is taken into account by a model based on the absorption coefficient data obtained by Constant Photocurrent Measurement (CPM) in the near infrared region. The GUTL (Gauss-Urbach-Tauc-Lorentz) model has been presented as an extension of the standard Urbach-Tauc-Lorentz model and proposed as a predictor for the wavelength dependent optical constants of amorphous silicon in the near infrared spectra. Values produced for the GUTL model have been used as input for a set of FDTD simulations, taking in consideration different material qualities and waveguide dimensions directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding.",

keywords = "Amorphous silicon, Optical waveguides, Finite difference methods, Time-domain analysis",

author = "A. Fantoni and P. Lourenco and M. Vieira",

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doi = "10.1109/NUSOD.2017.8010044",

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pages = "167--168",

booktitle = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017",

publisher = "IEEE Computer Society",

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Fantoni, A, Lourenco, P & Vieira, M 2017, A model for the refractive index of amorphous silico for FDTD simulation of photonics waveguides. in 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017., 8010044, IEEE Computer Society, pp. 167-168, 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, Copenhagen, Denmark, 24/07/17. https://doi.org/10.1109/NUSOD.2017.8010044

A model for the refractive index of amorphous silico for FDTD simulation of photonics waveguides. / Fantoni, A.; Lourenco, P.; Vieira, M.
17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017. IEEE Computer Society, 2017. p. 167-168 8010044.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lourenco, P.

AU - Vieira, M.

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AB - This paper presents an analysis of the material quality influence for amorphous silicon waveguides for microphotonic applications. Material quality is taken into account by a model based on the absorption coefficient data obtained by Constant Photocurrent Measurement (CPM) in the near infrared region. The GUTL (Gauss-Urbach-Tauc-Lorentz) model has been presented as an extension of the standard Urbach-Tauc-Lorentz model and proposed as a predictor for the wavelength dependent optical constants of amorphous silicon in the near infrared spectra. Values produced for the GUTL model have been used as input for a set of FDTD simulations, taking in consideration different material qualities and waveguide dimensions directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding.

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KW - Finite difference methods

KW - Time-domain analysis

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A model for the refractive index of amorphous silico for FDTD simulation of photonics waveguides

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