A low-voltage voltage-controlled ring-oscillator employing dynamic-threshold-MOS and body-biasing techniques

S. Abdollahvand, L. B. Oliveira, L. Gomes, J. Goes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In this paper a four-stage self-biased voltage-controlled oscillator (VCO) is presented. The proposed ring-oscillator circuit employs a combination of dynamic-threshold-MOS (DT-MOS) and bulk-driven transistors to design low-voltage low-power VCO with high oscillation frequency. By using an auxiliary body-driven latch, the VCO achieves a wide operating frequency range from 0.88 to 1.36 GHz (more than 40% tuning range). Simulation results in a 65-nm CMOS technology shows frequency variations of 3% against temperature variation of -20 °C to 85°C, with only 0.36 mW power consumption using a 0.7 V supply voltage.

Original languageEnglish
Title of host publication2015 IEEE International Symposium on Circuits and Systems (ISCAS)
Place of PublicationNew York
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1294-1297
Number of pages4
Volume2015-July
ISBN (Electronic)978-1-4799-8391-9
DOIs
Publication statusPublished - 27 Jul 2015
EventIEEE International Symposium on Circuits and Systems, ISCAS 2015 - Lisbon, Portugal
Duration: 24 May 201527 May 2015

Publication series

NameIEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2015-July
ISSN (Print)0271-4302
ISSN (Electronic)2158-1525

Conference

ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 2015
CountryPortugal
CityLisbon
Period24/05/1527/05/15

Keywords

  • bulk-driven
  • DT-MOS
  • low-voltage
  • ring-oscillator
  • self-biasing
  • VCO

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