@inproceedings{fad822e3eb9548e584e863dff4de2356,
title = "A low-voltage voltage-controlled ring-oscillator employing dynamic-threshold-MOS and body-biasing techniques",
abstract = "In this paper a four-stage self-biased voltage-controlled oscillator (VCO) is presented. The proposed ring-oscillator circuit employs a combination of dynamic-threshold-MOS (DT-MOS) and bulk-driven transistors to design low-voltage low-power VCO with high oscillation frequency. By using an auxiliary body-driven latch, the VCO achieves a wide operating frequency range from 0.88 to 1.36 GHz (more than 40% tuning range). Simulation results in a 65-nm CMOS technology shows frequency variations of 3% against temperature variation of -20 °C to 85°C, with only 0.36 mW power consumption using a 0.7 V supply voltage.",
keywords = "bulk-driven, DT-MOS, low-voltage, ring-oscillator, self-biasing, VCO",
author = "S. Abdollahvand and Oliveira, {L. B.} and L. Gomes and J. Goes",
note = "Sem PDF. This work was supported by the Portuguese Foundation for Science and Technology (FCT/MCTES) (CTS multi-annual funding) through PEST (PEST-OE/EEI/UI0066/2014) and DISRUPTIVE (EXCL/EEIELC/0261/2012) and PhD Grant SFRH/BD/76626/2011.; IEEE International Symposium on Circuits and Systems, ISCAS 2015 ; Conference date: 24-05-2015 Through 27-05-2015",
year = "2015",
month = jul,
day = "27",
doi = "10.1109/ISCAS.2015.7168878",
language = "English",
volume = "2015-July",
series = "IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "1294--1297",
booktitle = "2015 IEEE International Symposium on Circuits and Systems (ISCAS)",
address = "United States",
}