A Low Voltage Low Power Temperature Sensor Using a 2nd Order Delta-Sigma Modulator

Filipe Quendera; Nuno Paulino

doi:10.1109/DCIS.2015.7388608

A Low Voltage Low Power Temperature Sensor Using a 2nd Order Delta-Sigma Modulator

Filipe Quendera, Nuno Paulino

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper presents a low power low voltage temperature sensor designed in a 0.13 μm CMOS technology. The circuit consist of a bandgap voltage reference and a second order sigma-delta modulator. The circuit was designed to operate with a minimum power supply of 0.5 V. The voltage reference circuit operates from -50°C to 110°C with a temperature coefficient of 67.15 (ppm/°C) with a maximum power dissipation of 5.9μW. The bandgap circuit combined with the second order Δ modulator dissipates 6.1μW to 11.7μW over a -30°C to 70°C range.

Original language	English
Title of host publication	2015 Conference on Design of Circuits and Integrated Systems (DCIS)
Place of Publication	New York
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	978-1-4673-7228-2
DOIs	https://doi.org/10.1109/DCIS.2015.7388608
Publication status	Published - 2015
Event	Conference on Design of Circuits and Integrated Systems, DCIS 2015 - Estoril, Portugal Duration: 25 Nov 2015 → 27 Nov 2015

Conference

Conference	Conference on Design of Circuits and Integrated Systems, DCIS 2015
Country	Portugal
City	Estoril
Period	25/11/15 → 27/11/15

Keywords

Bandgap Voltage Reference
CMOS BVR
Low Power
Low Voltage
Sigma-Delta Modulation
Temperature Sensor

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Cite this

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title = "A Low Voltage Low Power Temperature Sensor Using a 2nd Order Delta-Sigma Modulator",

abstract = "This paper presents a low power low voltage temperature sensor designed in a 0.13 μm CMOS technology. The circuit consist of a bandgap voltage reference and a second order sigma-delta modulator. The circuit was designed to operate with a minimum power supply of 0.5 V. The voltage reference circuit operates from -50°C to 110°C with a temperature coefficient of 67.15 (ppm/°C) with a maximum power dissipation of 5.9μW. The bandgap circuit combined with the second order Δ modulator dissipates 6.1μW to 11.7μW over a -30°C to 70°C range.",

keywords = "Bandgap Voltage Reference, CMOS BVR, Low Power, Low Voltage, Sigma-Delta Modulation, Temperature Sensor",

author = "Filipe Quendera and Nuno Paulino",

note = "Sem PDF. This work was supported by the Portuguese Foundation for Science and Technology (FCT/MCTES) (CTS multi-annual funding) through PEST(PEST-OE/EEI/UI0066/2014).; Conference on Design of Circuits and Integrated Systems, DCIS 2015 ; Conference date: 25-11-2015 Through 27-11-2015",

year = "2015",

doi = "10.1109/DCIS.2015.7388608",

language = "English",

booktitle = "2015 Conference on Design of Circuits and Integrated Systems (DCIS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Quendera, F & Paulino, N 2015, A Low Voltage Low Power Temperature Sensor Using a 2nd Order Delta-Sigma Modulator. in 2015 Conference on Design of Circuits and Integrated Systems (DCIS)., 7388608, Institute of Electrical and Electronics Engineers Inc., New York, Conference on Design of Circuits and Integrated Systems, DCIS 2015, Estoril, Portugal, 25/11/15. https://doi.org/10.1109/DCIS.2015.7388608

TY - GEN

T1 - A Low Voltage Low Power Temperature Sensor Using a 2nd Order Delta-Sigma Modulator

AU - Quendera, Filipe

AU - Paulino, Nuno

N1 - Sem PDF. This work was supported by the Portuguese Foundation for Science and Technology (FCT/MCTES) (CTS multi-annual funding) through PEST(PEST-OE/EEI/UI0066/2014).

PY - 2015

Y1 - 2015

N2 - This paper presents a low power low voltage temperature sensor designed in a 0.13 μm CMOS technology. The circuit consist of a bandgap voltage reference and a second order sigma-delta modulator. The circuit was designed to operate with a minimum power supply of 0.5 V. The voltage reference circuit operates from -50°C to 110°C with a temperature coefficient of 67.15 (ppm/°C) with a maximum power dissipation of 5.9μW. The bandgap circuit combined with the second order Δ modulator dissipates 6.1μW to 11.7μW over a -30°C to 70°C range.

AB - This paper presents a low power low voltage temperature sensor designed in a 0.13 μm CMOS technology. The circuit consist of a bandgap voltage reference and a second order sigma-delta modulator. The circuit was designed to operate with a minimum power supply of 0.5 V. The voltage reference circuit operates from -50°C to 110°C with a temperature coefficient of 67.15 (ppm/°C) with a maximum power dissipation of 5.9μW. The bandgap circuit combined with the second order Δ modulator dissipates 6.1μW to 11.7μW over a -30°C to 70°C range.

KW - Bandgap Voltage Reference

KW - CMOS BVR

KW - Low Power

KW - Low Voltage

KW - Sigma-Delta Modulation

KW - Temperature Sensor

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U2 - 10.1109/DCIS.2015.7388608

DO - 10.1109/DCIS.2015.7388608

M3 - Conference contribution

AN - SCOPUS:84963830913

BT - 2015 Conference on Design of Circuits and Integrated Systems (DCIS)

PB - Institute of Electrical and Electronics Engineers Inc.

CY - New York

T2 - Conference on Design of Circuits and Integrated Systems, DCIS 2015

Y2 - 25 November 2015 through 27 November 2015

ER -