A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays

Ângelo Santos; Bhawna Tiwari; Jorge Martins; Ana Santa; Kamal Chapagai; Pydi Bahubalindruni; Pedro Barquinha

doi:10.1109/IFETC.2018.8583933

A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays

Ângelo Santos, Bhawna Tiwari, Jorge Martins, Ana Santa, Kamal Chapagai, Pydi Bahubalindruni, Pedro Barquinha

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

65 Downloads (Pure)

Abstract

This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of V _dd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.

Original language	English
Title of host publication	2018 International Flexible Electronics Technology Conference, IFETC 2018
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)	9781538633571
DOIs	https://doi.org/10.1109/IFETC.2018.8583933
Publication status	Published - 19 Dec 2018
Event	2018 International Flexible Electronics Technology Conference, IFETC 2018 - Ottawa, Canada Duration: 7 Aug 2018 → 9 Aug 2018

Conference

Conference	2018 International Flexible Electronics Technology Conference, IFETC 2018
Country/Territory	Canada
City	Ottawa
Period	7/08/18 → 9/08/18

Keywords

Capacitor bootstrapping
IGZO TFTs
Low-voltage operation
Pseudo-CMOS
Shift register

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10.1109/IFETC.2018.8583933

A Low-Power Rail-to-Rail RowColumn Selector (author proof)Submitted manuscript, 604 KB

Cite this

Santos, Â., Tiwari, B., Martins, J., Santa, A., Chapagai, K., Bahubalindruni, P., & Barquinha, P. (2018). A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays. In 2018 International Flexible Electronics Technology Conference, IFETC 2018 Article 8583933 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IFETC.2018.8583933

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title = "A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays",

abstract = " This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of V dd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area. ",

keywords = "Capacitor bootstrapping, IGZO TFTs, Low-voltage operation, Pseudo-CMOS, Shift register",

author = "{\^A}ngelo Santos and Bhawna Tiwari and Jorge Martins and Ana Santa and Kamal Chapagai and Pydi Bahubalindruni and Pedro Barquinha",

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Santos, Â, Tiwari, B, Martins, J , Santa, A, Chapagai, K, Bahubalindruni, P & Barquinha, P 2018, A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays. in 2018 International Flexible Electronics Technology Conference, IFETC 2018., 8583933, Institute of Electrical and Electronics Engineers (IEEE), 2018 International Flexible Electronics Technology Conference, IFETC 2018, Ottawa, Canada, 7/08/18. https://doi.org/10.1109/IFETC.2018.8583933

A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays. / Santos, Ângelo; Tiwari, Bhawna; Martins, Jorge et al.
2018 International Flexible Electronics Technology Conference, IFETC 2018. Institute of Electrical and Electronics Engineers (IEEE), 2018. 8583933.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tiwari, Bhawna

AU - Martins, Jorge

AU - Santa, Ana

AU - Chapagai, Kamal

AU - Bahubalindruni, Pydi

AU - Barquinha, Pedro

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N2 - This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of V dd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.

AB - This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of V dd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.

KW - Capacitor bootstrapping

KW - IGZO TFTs

KW - Low-voltage operation

KW - Pseudo-CMOS

KW - Shift register

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A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays

Abstract

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Keywords

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