A Low-Power Rail-to-Rail Row/Column Selector Operating at 2V Using a-IGZO TFTs for Flexible Displays

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Abstract

This paper presents design and implementation of 8-bit shift register with low-voltage amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) for row/column selection of pixel matrix in flexible displays. This circuit is capable of ensuring complete rail-to-rail operation by employing novel NAND gates that were developed based on capacitive bootstrapping load. As a first step, a positive edge triggered D-flip flop (D-FF) is designed using these logic gates, then a complete 8-bit shift register is designed and simulated using in-house low-voltage IGZO TFT models in Cadence Virtuoso. During these circuit simulations a power supply voltage of 2V and a channel length of 2 μm were used. Simulation outcome of 8-bit shift register has shown a power consumption of 72.15 μW with output voltage swing of 95% of V dd at 20 kHz operating frequency, going well beyond the state of the art for oxide TFT technology at very low supply voltage. The proposed circuit can be used as a row/column selector in flexible displays that can operate at low supply voltage and allows small active-area.

Original languageEnglish
Title of host publication2018 International Flexible Electronics Technology Conference, IFETC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538633571
DOIs
Publication statusPublished - 19 Dec 2018
Event2018 International Flexible Electronics Technology Conference, IFETC 2018 - Ottawa, Canada
Duration: 7 Aug 20189 Aug 2018

Conference

Conference2018 International Flexible Electronics Technology Conference, IFETC 2018
CountryCanada
CityOttawa
Period7/08/189/08/18

Keywords

  • Capacitor bootstrapping
  • IGZO TFTs
  • Low-voltage operation
  • Pseudo-CMOS
  • Shift register

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